BUZ50 N-Channel MOSFET Transistor 1000V 2.5A TO-220
The BUZ50 is a high-voltage N-channel enhancement-mode MOSFET in a TO-220 package built for rugged switching tasks. Rated to withstand high blocking voltages while allowing moderate continuous current, it is aimed at designs where voltage endurance matters more than very low conduction loss. Its construction supports both steady and pulsed operation with predictable thermal behavior.
Gate drive requirements are modest and the transistor offers well-defined threshold behavior, so designers can integrate it into gate-drive topologies for high-voltage converters or protection stages. Its switching times lie in the nanosecond-to-sub microsecond range, helping reduce switching loss when paired with appropriate snubbing or soft-switching techniques.
An integrated body diode with low forward drop and quick reverse recovery makes the device tolerant of inductive switching. The TO-220 form factor and manageable thermal resistance simplify heatsink choices for continuous use in compact power assemblies. Datasheet values support safe operating-area planning and thermal management during design and testing.
Features:
- N-channel enhancement-mode MOSFET with high voltage capability.
- TO-220 package for easy heatsinking and PCB mounting.
- Fast switching performance suitable for power converters.
- Integrated body diode with low forward voltage and short recovery.
- Robust thermal design for pulsed and continuous operation.
Specifications:
| Specifications: | Value |
|---|---|
| Transistor Type: | N-Channel MOSFET |
| Package: | TO-220 |
| Drain-Source Voltage (VDS): | 1000 V |
| Continuous Drain Current (ID): | 2.5 A |
| Pulsed Drain Current (IDM): | 10 A |
| Gate-Source Voltage (VGS): | ±20 V |
| Drain-Source On-Resistance (RDS(on)): | 4.5 Ω |
| Gate Threshold Voltage (VGS(th)): | 2.1 – 4.0 V |
| Power Dissipation (PD): | 75 W |
| Thermal Resistance Junction-to-Case (RθJC): | 1.67 °C/W |
| Body Diode Forward Voltage (VSD): | 1.05 – 1.3 V |
| Reverse Recovery Time (trr): | 2 ns |
Applications:
- High-voltage power supplies.
- Industrial DC-DC converters.
- Inductive load switching and protection.
- Snubbered switching stages.
Package Contents:
- 1x BUZ50 N-Channel MOSFET Transistor 1000V 2.5A TO-220