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FGH40N60 IGBT Transistors 600V, 80A Field Stop IGBT

60.00 EGP

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Availability: In Stock
SKU:9650354054702
Description

Using novel field stop IGBT technology, ON Semiconductor’s new series of field stop 2nd generation IGBTs offer the optimum performance for solar inverter, UPS, welder, telecom, ESS and PFC applications where low conduction and switching losses are essential.

Features
  • Maximum Junction Temperature : TJ = 175°C
  • Positive Temperature Coefficient for Easy Parallel Operating
  • High Current Capability
  • Low Saturation Voltage: VCE(sat) = 1.9 V (Typ) @ IC = 40 A
  • High Input Impedance
  • Fast Switching: EOFF = 6.5 J/A
  • Tighten Parameter Distribution
  • This Device is Pb−Free, Halogen Free/BFR Free and is RoHS Compliant
Applications

Solar Inverter, Welder, UPS, PFC, Telecom, ESS

Specifications
Product Attribute Attribute Value
Product Category: IGBT Transistors
Technology: Si
Package/Case: TO-247
Mounting Style: Through Hole
Configuration: Single
Collector- Emitter Voltage VCEO Max: 600 V
Collector-Emitter Saturation Voltage: 1.9 V
Maximum Gate Emitter Voltage: – 20 V, 20 V
Continuous Collector Current at 25 C: 80 A
Pd – Power Dissipation: 349 W
Minimum Operating Temperature: – 55 C
Maximum Operating Temperature: + 150 C
Gate-Emitter Leakage Current: +/- 400 nA
Product Type: IGBT Transistors
FGH40N60 Datasheet

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