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FK25SM N-Channel MOSFET Transistor TO-3P
High-speed FK25SM N-Channel MOSFET Transistor (TO-3P) with a 250V drain-source voltage and 25A drain current, ideal for power switching applications.
30.00 EGP
FK25SM N-Channel MOSFET Transistor TO-3P
The Mitsubishi FK25SM-5 N-Channel Power MOSFET is a robust semiconductor device engineered for high-speed switching applications in modern power electronics. As an N-channel enhancement-mode MOSFET, it utilizes silicon technology to provide superior conductivity when activated by a positive gate-source voltage, enabling efficient control of high currents and voltages.\
Features:
- High-speed switching for efficient power control.
- Low on-state resistance of 0.16Ω maximum to minimize losses.
- Integrated fast recovery diode with 150ns maximum reverse recovery time.
- Wide operating temperature range from -55°C to +150°C.
- High drain-source voltage rating of 250V.
- Continuous drain current capability of 25A.
Specifications:
| Parameter | Value |
|---|---|
| Drain-Source Voltage (VDS) | 250V |
| Gate-Source Voltage (VGS) | ±30V |
| Drain Current (ID) | 25A |
| Drain Current (Pulsed) | 75A |
| On-Resistance (rDS(on)) | 0.16Ω |
| Power Dissipation (PD) | 250W |
| Channel Temperature (Tch) | 150°C |
| Storage Temperature (Tstg) | -55°C to +150°C |
| Package Type | TO-3P |
| Type | N-Channel MOSFET |
Pin Configuration:
Applications:
- Power conversion systems for efficient energy transfer.
- Servo motor drives for precise speed and torque control.
- Industrial robots and automation systems.
- Inverter circuits for renewable energy applications.
- Uninterruptible power supplies (UPS) for stable power delivery.
- Fluorescent lighting and other high-power switching applications.
package Include:
1x FK25SM N-Channel MOSFET Transistor TO-3P.
Datasheet:
| Weight | 6 g |
|---|---|
| Dimensions | 40 × 16 × 5 mm |