FQP14N60 MOSFET Transistor
The FQP14N60 is a robust N-channel power MOSFET designed for high-voltage switching applications. It is part of the Littelfuse Polar™ HiPerFET™ family, which features high break-down voltage, low on-state resistance, and strong avalanche ruggedness. The device delivers reliable performance in demanding power conversion roles such as SMPS (switch-mode power supplies), DC-DC converters, battery chargers, and motor drives.
Features:
- Low on-state resistance (R_DS(on) ≤ 550mΩ) for reduced conduction losses.
- Low gate charge (Q_G = 36nC) for faster switching and lower drive power.
- Avalanche rated with E_AS = 900mJ for enhanced ruggedness.
- High power dissipation capability up to 300W.
Specifications:
| Parameter | Value |
|---|---|
| Drain-Source Voltage (V_DSS) | 600V |
| Continuous Drain Current (I_D at 25°C) | 14A |
| Pulsed Drain Current (I_DM) | 42A |
| On-State Resistance (R_DS(on)) | 550mΩ |
| Gate-Source Voltage (V_GSS) | ±30V |
| Gate Threshold Voltage (V_GS(th)) | 3V to 5.5V |
| Power Dissipation (P_D) | 300W |
| Avalanche Energy (E_AS) | 900mJ |
| Operating Temperature Range | -55°C to 150°C |
| Input Capacitance (C_iss) | 2500pF |
| Output Capacitance (C_oss) | 215pF |
| Reverse Transfer Capacitance (C_rss) | 13pF |
| Turn-On Delay Time (t_d(on)) | 23ns |
| Turn-Off Delay Time (t_d(off)) | 70ns |
| Total Gate Charge (Q_g) | 36nC |
Pin Configuration:
Applications:
- Switch-mode and resonant-mode power supplies.
- DC-DC converters for efficient voltage transformation.
- Power Factor Correction (PFC) circuits in AC-DC systems.
- AC and DC motor drives for industrial automation.
- Robotics and servo controls requiring precise power handling.
- High-voltage switching in consumer electronics and appliances.
Package Include:
1x FQP14N60 MOSFET Transistor.