FQPF11N60 N-Channel MOSFET Tramsistor

Specifications

• Type Designator: FQPF11N60
• Type of Transistor: MOSFET
• Type of Control Channel: N -Channel
• Maximum Power Dissipation (Pd): 36 W
• Maximum Drain-Source Voltage |Vds|: 600 V
• Maximum Gate-Source Voltage |Vgs|: 30 V
• Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V
• Maximum Drain Current |Id|: 11 A
• Maximum Junction Temperature (Tj): 150 °C
• Total Gate Charge (Qg): 40 nC
• Maximum Drain-Source On-State Resistance (Rds): 0.32 Ohm
• Package:  TO220F

Technical Datasheet