Specifications
- Type Designator: FQPF11N60
- Type of Transistor: MOSFET
- Type of Control Channel: N -Channel
- Maximum Power Dissipation (Pd): 36 W
- Maximum Drain-Source Voltage |Vds|: 600 V
- Maximum Gate-Source Voltage |Vgs|: 30 V
- Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V
- Maximum Drain Current |Id|: 11 A
- Maximum Junction Temperature (Tj): 150 °C
- Total Gate Charge (Qg): 40 nC
- Maximum Drain-Source On-State Resistance (Rds): 0.32 Ohm
- Package: TO220F
