FS10UM N-Channel MOSFET Transistor TO-220F
The FS10UM N-Channel MOSFET Transistor is designed for high-speed switching applications. It is housed in a TO-220F package, ensuring efficient thermal dissipation. This transistor features a drain-source voltage rating of 250V and a maximum drain current of 10A. With an on-state resistance of 0.52Ω, it is ideal for use in power electronic applications such as power supplies, DC-DC converters, and battery chargers. This MOSFET also delivers excellent switching performance, making it suitable for high-efficiency power management in a variety of consumer electronics and industrial devices.
Features:
- High drain-source voltage rating of 250V.
- Low on-state resistance of 0.52Ω.
- Maximum drain current of 10A.
- High-speed switching capabilities.
- TO-220F package for optimized thermal performance.
Specifications:
| Parameter | Value |
|---|---|
| Drain-source voltage | 250V |
| Gate-source voltage | ±20V |
| Drain current | 10A |
| Drain current (Pulsed) | 30A |
| Maximum power dissipation | 65W |
| Channel temperature | -55~+150°C |
| Storage temperature | -55~+150°C |
| On-state resistance | 0.52Ω |
| Input capacitance | 950pF |
| Output capacitance | 90pF |
| Reverse transfer capacitance | 25pF |
| Turn-on delay time | 20ns |
| Rise time | 25ns |
| Turn-off delay time | 150ns |
| Fall time | 40ns |
| Thermal resistance | 1.92°C/W |
Pin Configuration:
Applications:
- Switch-mode power supplies (SMPS).
- DC-DC converters.
- Battery chargers.
- Power supplies for consumer electronics like printers, computers, and VCRs.
- CS switches in CRT display monitors.
Package Include:
1x FS10UM N-Channel MOSFET Transistor TO-220F