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IRF1404PBF Power MOSFET Transistor N-Channel 40V 162A TO-220

IRF1404PBF Power MOSFET Transistor N-Channel 40V 162A TO-220 is  delivers ultra-low resistance and high-current switching efficiency.

35.00 EGP

In stockSKU 34963001318610
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Availability: In Stock
SKU:34963001318610
IRF1404PBF Power MOSFET Transistor N-Channel 40V 162A TO-220

IRF1404PBF Power MOSFET Transistor N-Channel 40V 162A TO-220 – Ultra Low RDS(on), High Efficiency Switching Transistor is a high-power N-channel MOSFET designed for efficient switching and power management applications. With extremely low on-resistance and a high current handling capability of up to 162A, it is ideal for motor control, DC-DC converters, power supplies, and high-efficiency switching circuits. The TO-220 package ensures excellent thermal performance and easy mounting for heat dissipation, making it suitable for industrial, automotive, and DIY high-power electronics projects.

Features
  • Ultra-low RDS(on) for high efficiency switching performance.
  • High continuous drain current capability up to 162A.
  • Supports 40V drain-source voltage rating.
  • Fast switching speed for improved circuit response.
  • TO-220 package ensures excellent heat dissipation.
  • Suitable for high-power motor control applications.
  • Reliable performance in power electronics circuits.
  • Optimized for low conduction losses.
  • Easy to drive in switching applications.
  • Ideal for industrial and DIY power systems.
Specifications
Parameter Details
Part Number IRF1404PBF
Transistor Type N-Channel Power MOSFET
Package Type TO-220AB
Drain-To-Source Breakdown Voltage (VDS) 40V
Continuous Drain Current (Silicon Limited) 202A At 25°C Case Temperature
Continuous Drain Current (Package Limited) 75A Due To Lead Wire Limitations
Static Drain-To-Source On-Resistance (RDS(on)) 0.004Ω Maximum At 110A Gate Drive
Gate Threshold Voltage (VGS(th)) 2.0V To 4.0V
Gate-To-Source Voltage (VGS) ±20V Maximum
Total Gate Charge (Qg) 131nC Typical
Maximum Power Dissipation (PD) 333W At 25°C Case Temperature
Single Pulse Avalanche Energy (EAS) 620mJ Maximum
Operating Junction Temperature Range -55°C To +175°C
Thermal Resistance Junction-To-Case (RθJC) 0.45°C/W Maximum
Thermal Resistance Junction-To-Ambient (RθJA) 62°C/W Maximum
Mounting Type Through Hole
Applications Power Switching, Motor Control, DC-DC Converters, Power Supplies
Dimensions

Pin Configuration

Pin Number Pin Name Function/Description
1 Gate Controlling terminal for the MOSFET. Applied voltage controls the drain current.
2 (and Tab) Drain Main current-carrying terminal. Connected to the heat-dissipating tab.
3 Source Common connection for both Gate and Drain current.

 

Applications
  • DC motor speed control circuits.
  • Power supply switching circuits.
  • DC-DC converter modules.
  • Automotive electronic systems.
  • High-current battery protection circuits.
  • Inverter and UPS systems.
  • LED high-power drivers.
  • Solar power regulation systems.
  • Industrial automation equipment.
  • DIY high-power electronics projects.
Package Contents
  • 1 x  IRF1404PBF Power MOSFET Transistor N-Channel 40V 162A TO-220
Datasheet
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