IRF460 N-Channel MOSFET 20A-500V-0.27Ohm
The IRF460 is a three-terminal silicon device built with an N-Channel enhancement mode configuration. It is designed to handle high current and high voltage for robust power management applications. The device is engineered to provide an optimal balance of fast switching speed, rugged design, and low conduction losses, making it suitable for modern, energy-efficient power electronics.
Features:
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Drain-to-Source Voltage | V<sub>DSS</sub> | 500 | V |
| Continuous Drain Current | I<sub>D</sub> | 20 | A |
| Max. On-State Resistance | R<sub>DS(ON)</sub> | 0.27 | Ω |
| Gate Threshold Voltage (Max.) | V<sub>GS(th)</sub> | 4 | V |
| Total Gate Charge (Max.) | Q<sub>G</sub> | 210 | nC |
| Max. Power Dissipation (T<sub>C</sub>=25°C) | P<sub>D</sub> | 250 | W |
| Operating Junction Temperature | T<sub>J</sub> | -55 to +150 | °C |
| Package Options | – | TO-247AB |
Pin Configuration:
Applications:
- BMS Circuits
- UPS Circuits
- Switch Mode Power Supplies
- DC to DC converters
- AC to DC converters
- Motor Drivers
- Solar Power Supplies
- Solar Chargers
- Battery Chargers Circuits
- Audio Amplification Applications
Package Include:
1x IRF460 N-Channel MOSFET 20A-500V-0.27Ohm
