IRF640 N-Channel MOSFET Transistor 200V – 0.15Ω – 18A TO-220
The IRF640N is a high-performance N-Channel Power MOSFET from International Rectifier, featuring Fifth Generation HEXFET technology. This transistor is designed to deliver extremely low on-resistance, fast switching speeds, and rugged reliability, making it ideal for a wide range of demanding applications. Encased in a TO-220 package, it offers excellent thermal performance and is easy to mount. With a maximum drain-source voltage of 200V and a continuous drain current of 18A, the IRF640N is perfect for power management in industrial and commercial systems.
Features:
- High Voltage Handling: 200 V drain‑to‑source breakdown voltage (VBRDSS).
- Low On‑Resistance: RDS(on) ≤ 0.15 Ω at VGS=10 V, ID=11 A.
- High Current Capability: 18 A continuous drain current at TC=25 °C (13 A at 100 °C).
- Robust Avalanche Rating: Single‑pulse avalanche energy EAS=247 mJ; fully avalanche‑rated design.
- Fast Switching: Total gate charge Qg=67 nC; turn‑on delay td(on)=10 ns; turn‑off delay td(off)=23 ns.
- High Temperature Operation: Junction temperature range –55 °C to +175 °C.
- Ease of Paralleling: Simple to parallel multiple devices for higher current requirements.
- Simple Drive Requirements: Standard gate‑drive levels; no special drive circuitry needed.
Specifications:
| Parameter | Symbol | Min | Typ | Max | Units | Conditions |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| Drain‑to‑Source Voltage: | VDSS | – | – | 200 | V | VGS=0 V, ID=250 µA |
| Continuous Drain Current (TC=25 °C): | ID | – | – | 18 | A | VGS=10 V |
| Pulsed Drain Current: | IDM | – | – | 72 | A | |
| Power Dissipation (TC=25 °C): | PD | – | – | 150 | W | |
| Gate‑to‑Source Voltage: | VGS | –20 | – | +20 | V | |
| Single‑Pulse Avalanche Energy: | EAS | – | – | 247 | mJ | |
| Thermal Resistances | ||||||
| Junction‑to‑Case: | RθJC | – | – | 1.0 | °C/W | |
| Junction‑to‑Ambient (no heat sink): | RθJA | – | – | 62 | °C/W | |
| Electrical Characteristics (TJ=25 °C) | ||||||
| Gate Threshold Voltage: | VGS(th) | 2.0 | – | 4.0 | V | VDS=VGS, ID=250 µA |
| Static Drain‑Source On‑Resistance: | RDS(on) | – | – | 0.15 | Ω | VGS=10 V, ID=11 A |
| Forward Transconductance: | gfs | 6.8 | – | – | S | VDS=50 V, ID=11 A |
| Drain‑to‑Source Leakage Current: | IDSS | – | – | 250 | µA | VDS=160 V, VGS=0 V |
| Total Gate Charge: | Qg | – | – | 67 | nC | ID=11 A, VDS=160 V |
| Turn‑On Delay: | td(on) | – | 10 | – | ns | VDD=100 V |
| Turn‑Off Delay: | td(off) | – | 23 | – | ns | RG=2.5 Ω |
| Capacitances | ||||||
| Input Capacitance: | Ciss | – | 1160 | – | pF | VGS=0 V, f=1 MHz |
| Output Capacitance: | Coss | – | 185 | – | pF | VDS=25 V |
| Reverse Transfer Capacitance: | Crss | – | 53 | – | pF | f=1 MHz |
Pinout Diagram:
Footprint:
Applications:
- Switch‑Mode Power Supplies (SMPS).
- DC–DC Converters.
- Motor Control Drivers.
- Audio Amplifier Output Stages.
- Lighting Ballasts and LED Drivers.
- General High‑Voltage Switching.
Package Contents:
- 1x IRF640 N-Channel MOSFET Transistor 200V – 0.15Ω – 18A TO-220