IRFB3206 N-Channel MOSFET Transistor

IRFB3206 N-Channel MOSFET Transistor

The IRFB3206 N-Channel MOSFET Transistor is a high-performance power device optimized for efficient switching in advanced electronic systems. As an N-channel enhancement-mode MOSFET, it regulates current flow between drain and source through gate voltage application, providing exceptional power handling with a 60V drain-source breakdown voltage. This allows it to manage continuous drain currents up to 210A silicon-limited at 25°C case temperature, dropping to 150A at 100°C, while package limitations cap it at 120A for reliable operation in high-current scenarios. The ultra-low static drain-source on-resistance of 2.4mΩ typical and 3.0mΩ maximum at 10V gate-source voltage and 75A drain current significantly reduces conduction losses, enhancing overall system efficiency in power-intensive applications.

Features:

• Ultra-low on-resistance of 3.0mΩ maximum for minimized conduction losses.
• High current rating of 210A silicon-limited for power-dense applications.
• Enhanced avalanche and dv/dt ruggedness for transient protection.
• Fast switching speeds with low gate charge for high-frequency efficiency.

Specifications:

Pin Configuration:

Applications:

• Synchronous rectification in switch-mode power supplies.
• Motor control circuits.
• DC-DC converters.
• Uninterruptible power supplies.
• Solar charge controllers.
• High-speed power switching.
• Hard-switched and high-frequency circuits.

Package Include:

1x IRFB3206 N-Channel MOSFET Transistor

Datasheet:

IRFB3206