IRFB3206 N-Channel MOSFET Transistor
The IRFB3206 N-Channel MOSFET Transistor is a high-performance power device optimized for efficient switching in advanced electronic systems. As an N-channel enhancement-mode MOSFET, it regulates current flow between drain and source through gate voltage application, providing exceptional power handling with a 60V drain-source breakdown voltage. This allows it to manage continuous drain currents up to 210A silicon-limited at 25°C case temperature, dropping to 150A at 100°C, while package limitations cap it at 120A for reliable operation in high-current scenarios. The ultra-low static drain-source on-resistance of 2.4mΩ typical and 3.0mΩ maximum at 10V gate-source voltage and 75A drain current significantly reduces conduction losses, enhancing overall system efficiency in power-intensive applications.
Features:
- Ultra-low on-resistance of 3.0mΩ maximum for minimized conduction losses.
- High current rating of 210A silicon-limited for power-dense applications.
- Enhanced avalanche and dv/dt ruggedness for transient protection.
- Fast switching speeds with low gate charge for high-frequency efficiency.
Specifications:
| Parameter | Value |
|---|---|
| Maximum Drain-Source Voltage | 60 V |
| Maximum Continuous Drain Current (25°C) | 210 A |
| Typical Drain-Source On-Resistance | 2.4 mΩ |
| Gate Threshold Voltage | 2.0 to 4.0 V |
| Maximum Gate-Source Voltage | ±20 V |
| Total Gate Charge | 120 to 170 nC |
| Body Diode Forward Voltage | 1.3 V |
| Operating Junction Temperature Range | -55°C to 175°C |
Pin Configuration:
Applications:
- Synchronous rectification in switch-mode power supplies.
- Motor control circuits.
- DC-DC converters.
- Uninterruptible power supplies.
- Solar charge controllers.
- High-speed power switching.
- Hard-switched and high-frequency circuits.
Package Include:
1x IRFB3206 N-Channel MOSFET Transistor
