IRFBE30 N-Channel Power MOSFET Transistor 800V 4.1A TO-220

IRFBE30 N-Channel Power MOSFET Transistor 800V 4.1A TO-220

The IRFBE30 from Vishay Siliconix is a third-generation N-channel power MOSFET in a TO-220AB package engineered for rugged high-voltage switching and fast, efficient operation in power conversion and industrial systems. It combines an 800 V drain-to-source rating with low thermal resistance in the TO-220AB package, repetitive-avalanche capability, and fast switching characteristics that simplify gate drive requirements and ease paralleling for higher current applications. This part is well suited for offline switch-mode power supplies, lighting and ballast circuits, motor controllers, and other high-voltage power stages where reliability and predictable switching behavior matter.

Features

• 800 V drain-to-source breakdown voltage for high-voltage switching applications.
• Low on-resistance specified at VGS = 10 V for efficient conduction.
• Repetitive avalanche rated for rugged operation under inductive loads.
• Fast switching with controlled gate charge for predictable gate-drive design.
• Ease of paralleling and simple drive requirements for scalable power stages.
• Standard TO-220AB package with low thermal resistance and heatsink mounting tab.

Specifications

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)

b. V DD = 50 V, starting TJ = 25 °C, L = 29 mH, R g = 25 Ω, IAS = 4.1 A (see fig. 12)

c. I SD ≤ 4.1 A, dI/dt ≤ 100 A/μs, VDD ≤ 600, TJ ≤ 150 °C

d. 1.6 mm from case

Applications

• High-voltage switched-mode power supplies (offline SMPS) for AC/DC conversion.
• Motor drive and inverter stages for industrial equipment.
• Lighting ballasts and high-voltage lamp drivers.
• Telecom and UPS power conversion modules.
• Any high-voltage switching or clamp circuits requiring repetitive avalanche capability and TO-220 mounting.

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