IRFP054 N-Channel MOSFET 60V 70A TO-247AC
The IRFP054 is a robust N-channel power MOSFET designed for high-current and high-efficiency switching applications. It features low on-resistance and fast switching characteristics, making it ideal for reducing conduction losses and improving overall system performance in power circuits.
This MOSFET is widely used in applications such as motor drivers, power supplies, and inverters. Its TO-247AC package allows for effective heat dissipation, enabling reliable operation under high load conditions. The device is suitable for both low-frequency and high-frequency switching designs, offering flexibility for various industrial and consumer electronics applications.
Features:
- N-channel enhancement mode MOSFET.
- Low on-resistance.
- Fast switching capability.
- High current handling capability.
- High efficiency operation.
- Good thermal performance.
- Suitable for high-power applications.
- Rugged and reliable design.
Specifications:
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Test Condition |
|---|---|---|---|---|---|---|
| Drain‑Source Breakdown Voltage | V(BR)DSS | 60 | – | – | V | VGS=0V, ID=250µA |
| Gate Threshold Voltage | VGS(th) | 2.0 | – | 4.0 | V | VDS=VGS, ID=250µA |
| Static Drain‑Source On‑Resistance | RDS(on) | – | – | 0.014 | Ω | VGS=10V, ID=54A |
| Forward Transconductance | gfs | 25 | – | – | S | VDS=25V, ID=54A |
| Drain‑Source Leakage Current | IDSS | – | – | 25 | µA | VDS=60V, VGS=0V |
| Drain‑Source Leakage (150°C) | IDSS | – | – | 250 | µA | VDS=48V, VGS=0V, TJ=150°C |
| Gate‑Source Leakage (Forward) | IGSS | – | – | 100 | nA | VGS=20V |
| Gate‑Source Leakage (Reverse) | IGSS | – | – | -100 | nA | VGS=-20V |
| Total Gate Charge | Qg | – | – | 160 | nC | ID=64A, VDS=48V, VGS=10V |
| Gate‑Source Charge | Qgs | – | – | 48 | nC | Same as above |
| Gate‑Drain Charge (Miller) | Qgd | – | – | 54 | nC | Same as above |
| Turn‑On Delay Time | td(on) | – | 20 | – | ns | VDD=30V, ID=64A, RG=6.2Ω |
| Rise Time | tr | – | 160 | – | ns | Same as above |
| Turn‑Off Delay Time | td(off) | – | 83 | – | ns | Same as above |
| Fall Time | tf | – | 150 | – | ns | Same as above |
| Input Capacitance | Ciss | – | 4500 | – | pF | VDS=25V, f=1MHz |
| Output Capacitance | Coss | – | 2000 | – | pF | Same as above |
| Reverse Transfer Capacitance | Crss | – | 300 | – | pF | Same as above |
| Diode Forward Voltage | VSD | – | – | 2.5 | V | IS=90A, VGS=0V, TJ=25°C |
| Reverse Recovery Time | trr | – | 270 | 540 | ns | IF=64A, di/dt=100A/µs |
| Reverse Recovery Charge | Qrr | – | 1.1 | 2.2 | µC | Same as above |
| Internal Drain Inductance | LD | – | 5.0 | – | nH | Between lead and die |
| Internal Source Inductance | LS | – | 13 | – | nH | Same as above |
| Junction‑to‑Case Thermal Resistance | RθJC | – | – | 1.5 | °C/W | Steady state |
Pinout:
Footprint:
Applications:
- Switch mode power supplies (SMPS).
- Motor control circuits.
- DC-DC converters.
- Power inverters.
- Battery management systems.
- High-current switching applications.
- Industrial power control systems.
Package Included:
- 1x IRFP054 N-Channel MOSFET 60V 70A TO-247AC.
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