IRFP140 N-Channel HEXFET Power MOSFET 33A 100V TO-247
IRFP140 is a 100V, 27A N-Channel HEXFET MOSFET in TO-247 package with low on-resistance, fast switching, and rugged high-power performance.
60.00 EGP
Buy NowIRFP140 N-Channel HEXFET Power MOSFET 33A 100V TO-247
The IRFP140 is a fifth-generation HEXFET power MOSFET designed by International Rectifier for efficient high-power switching. It combines advanced processing technology with a rugged device structure to deliver very low on-resistance and fast switching performance. This makes it suitable for demanding power circuits where efficiency, reliability, and thermal stability are important.
Built in a TO-247 package, the IRFP140 is intended for commercial and industrial applications that require higher power handling than TO-220 devices can typically provide. The package design also includes an isolated mounting hole, which improves mechanical convenience and helps make the device easier to integrate into practical power assemblies.
With a 100V drain-to-source rating, 27A continuous drain current, and 0.052Ω on-resistance, the IRFP140N is engineered for efficient power control and switching. Its 175°C operating temperature rating, fast switching behavior, and full avalanche rating further support dependable operation in tough electrical environments.
Features:
- Advanced process technology.
- Dynamic dv/dt rating.
- 175°C operating temperature.
- Fast switching.
- Fully avalanche rated.
- Low on-resistance for efficient power handling.
- TO-247 package for higher power applications.
- Isolated mounting hole for easier mounting.
Specifications:
| Parameter | Value |
|---|---|
| Device Type: | N-Channel HEXFET Power MOSFET |
| Part Number: | IRFP140N |
| Package: | TO-247 |
| Drain-to-Source Voltage (VDSS): | 100 V |
| Continuous Drain Current (ID @ TC = 25°C): | 27 A |
| Continuous Drain Current (ID @ TC = 100°C): | 19 A |
| Pulsed Drain Current (IDM): | 110 A |
| Drain-to-Source On-Resistance (RDS(on)): | 0.052 Ω |
| Gate Threshold Voltage (VGS(th)): | 2.0 – 4.0 V |
| Gate-to-Source Voltage (VGS): | ±20 V |
| Power Dissipation (PD @ TC = 25°C): | 94 W |
| Operating Junction Temperature (TJ): | -55°C to +175°C |
| Junction-to-Case Thermal Resistance (RθJC): | 1.6 °C/W |
| Case-to-Sink Thermal Resistance (RθCS): | 0.24 °C/W |
| Junction-to-Ambient Thermal Resistance (RθJA): | 40 °C/W |
| Total Gate Charge (Qg): | 94 nC |
| Gate-to-Source Charge (Qgs): | 15 nC |
| Gate-to-Drain Charge (Qgd): | 43 nC |
| Input Capacitance (Ciss): | 1400 pF |
| Output Capacitance (Coss): | 330 pF |
| Reverse Transfer Capacitance (Crss): | 170 pF |
| Turn-On Delay Time (td(on)): | 8.2 ns |
| Rise Time (tr): | 39 ns |
| Turn-Off Delay Time (td(off)): | 44 ns |
| Fall Time (tf): | 33 ns |
Applications:
- High-power switching.
- Commercial-industrial power circuits.
- Fast-switching power control.
- Rugged power handling designs.
- Avalanche-rated switching stages.
Package Contents:
- 1x IRFP140 N-Channel HEXFET Power MOSFET 33A 100V TO-247