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IRFPF50 HEXFET Power MOSFET 900V 6.7A TO-247AC
The IRFPF50 is a 900V, 6.7A TO-247AC HEXFET Power MOSFET with fast switching, low on-resistance, and a ruggedized design for commercial-industrial use.
35.00 EGP
Buy NowIRFPF50 HEXFET Power MOSFET 900V 6.7A TO-247AC
The IRFPF50 is a Third Generation HEXFET Power MOSFET from International Rectifier, designed to provide a combination of fast switching, ruggedized device design, low on-resistance, and cost-effectiveness.
The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices. Compared with the earlier TO-218 package, the TO-247 provides an isolated central mounting hole and greater creepage distance between pins, helping meet the requirements of most safety specifications.
Features
- Dynamic dv/dt rating
- Repetitive avalanche rated
- Isolated central mounting hole
- Fast switching
- Ease of paralleling
- Simple drive requirements
- 900V drain-to-source breakdown voltage
- 6.7A continuous drain current at TC = 25°C
- Low on-resistance
- TO-247AC package with isolated mounting hole
Specifications
| General | |
|---|---|
| Part Number | IRFPF50 |
| Manufacturer | International Rectifier (IOR) |
| Device Type | HEXFET Power MOSFET |
| Package | TO-247AC |
| Absolute Maximum Ratings | |
| Continuous Drain Current, ID @ TC = 25°C, VGS = 10V | 6.7 A |
| Continuous Drain Current, ID @ TC = 100°C, VGS = 10V | 4.2 A |
| Pulsed Drain Current, IDM | 27 A |
| Power Dissipation @ TC = 25°C | 190 W |
| Linear Derating Factor | 1.5 W/°C |
| Gate-to-Source Voltage, VGS | ±20 V |
| Single Pulse Avalanche Energy, EAS | 880 mJ |
| Avalanche Current, IAR | 6.7 A |
| Repetitive Avalanche Energy, EAR | 19 mJ |
| Peak Diode Recovery dv/dt | 1.5 V/ns |
| Operating Junction and Storage Temperature Range | -55 to +150 °C |
| Soldering Temperature, for 10 seconds | 300 °C, 1.6 mm from case |
| Mounting Torque, 6-32 or M3 screw | 10 lb-in (1.1 nominal) |
| Thermal Resistance | |
| Junction-to-Case, RθJC | 0.65 °C/W max. |
| Case-to-Sink, Flat, Greased Surface, RθCS | 0.24 °C/W typ. |
| Junction-to-Ambient, RθJA | 40 °C/W max. |
| Electrical Characteristics @ TJ = 25°C | |
| Drain-to-Source Breakdown Voltage, V(BR)DSS | 900 V min. (VGS = 0V, ID = 250µA) |
| Breakdown Voltage Temperature Coefficient | 1.2 V/°C typ. (Reference to 25°C, ID = 1mA) |
| Static Drain-to-Source On-Resistance, RDS(on) | 1.6 Ω max. (VGS = 10V, ID = 4.0A) |
| Gate Threshold Voltage, VGS(th) | 2.0 V min., 4.0 V max. (VDS = VGS, ID = 250µA) |
| Forward Transconductance, gfs | 4.9 S (VDS = 100V, ID = 4.0A) |
| Drain-to-Source Leakage Current, IDSS | 100 µA max. (VDS = 900V, VGS = 0V) |
| Drain-to-Source Leakage Current, IDSS @ TJ = 125°C | 500 µA max. (VDS = 720V, VGS = 0V) |
| Gate-to-Source Forward Leakage, IGSS | 100 nA max. (VGS = 20V) |
| Gate-to-Source Reverse Leakage, IGSS | -100 nA max. (VGS = -20V) |
| Gate Charge and Switching | |
| Total Gate Charge, Qg | 200 nC max. (ID = 6.7A, VDS = 360V, VGS = 10V) |
| Gate-to-Source Charge, Qgs | 24 nC max. (ID = 6.7A, VDS = 360V, VGS = 10V) |
| Gate-to-Drain Miller Charge, Qgd | 110 nC max. (ID = 6.7A, VDS = 360V, VGS = 10V) |
| Turn-On Delay Time, td(on) | 20 ns (VDS = 450V, ID = 6.7A, Ra = 6.2Ω, Rp = 67Ω) |
| Rise Time, tr | 34 ns (VDS = 450V, ID = 6.7A, Ra = 6.2Ω, Rp = 67Ω) |
| Turn-Off Delay Time, td(off) | 130 ns (VDS = 450V, ID = 6.7A, Ra = 6.2Ω, Rp = 67Ω) |
| Fall Time, tf | 37 ns (VDS = 450V, ID = 6.7A, Ra = 6.2Ω, Rp = 67Ω) |
| Inductance and Capacitance | |
| Internal Drain Inductance, LD | 5.0 nH (between lead 6 mm from package and center of die contact) |
| Internal Source Inductance, LS | 13 nH (between lead 6 mm from package and center of die contact) |
| Input Capacitance, Ciss | 2900 pF (VGS = 0V, VDS = 25V, f = 1MHz) |
| Output Capacitance, Coss | 270 pF (VGS = 0V, VDS = 25V, f = 1MHz) |
| Reverse Transfer Capacitance, Crss | 92 pF (VGS = 0V, VDS = 25V, f = 1MHz) |
| Source-Drain / Body Diode Ratings | |
| Continuous Source Current, IS | 6.7 A |
| Pulsed Source Current, ISM | 27 A |
| Diode Forward Voltage, VSD | 1.8 V max. (TJ = 25°C, IS = 6.7A, VGS = 0V) |
| Reverse Recovery Time, trr | 610 ns typ., 920 ns max. (TJ = 25°C, IF = 6.7A, di/dt = 100A/µs) |
| Reverse Recovery Charge, Qrr | 3.2 µC typ., 4.8 µC max. (TJ = 25°C, IF = 6.7A, di/dt = 100A/µs) |
| Forward Turn-On Time | Intrinsic turn-on time is negligible; turn-on is dominated by Ls + Lp |
Applications
- Commercial-industrial applications where higher power levels preclude the use of TO-220 devices
- Designs requiring fast switching, ruggedized device design, low on-resistance, ease of paralleling, and simple drive requirements
Package Content
- 1 x IRFPF50 HEXFET Power MOSFET 900V 6.7A TO-247AC
DataSheet
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