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IRFZ24N N-Channel Power MOSFET Transistor 55V 17A TO-220

IRFZ24N: 55V, 17A N-Channel Power MOSFET in TO-220. Features ultra-low RDS(on)​, fast switching, and 175∘C max temp. Ideal for power switching.

18.00 EGP

In stockSKU 3496300137053
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Availability: In Stock
SKU:3496300137053
IRFZ24N N-Channel Power MOSFET Transistor 55V 17A TO-220

The IRFZ24N is a Fifth Generation HEXFET® power MOSFET from International Rectifier. It utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This component combines fast switching speed with a ruggedized device design, providing designers with an incredibly efficient device for use in a wide variety of commercial and industrial applications.

Features
  • Advanced Process Technology
  • Dynamic dv/dt Rating
  • High Operating Temperature
  • Fast Switching
  • Fully Avalanche Rated
Specifications
Parameter Symbol Value Units
Drain-to-Source Breakdown Voltage VDSS 55 V
Continuous Drain Current (@ TC = 25°C) ID 17 A
Continuous Drain Current (@ TC = 100°C) ID 12 A
Pulsed Drain Current IDM 68 A
Max Power Dissipation (@ TC = 25°C) PD 45 W
Linear Derating Factor – 0.30 W/°C
Gate-to-Source Voltage VGS ±20 V
Static Drain-to-Source On-Resistance RDS(on) 0.07 Ω
Single Pulse Avalanche Energy EAS 71 mJ
Operating Junction Temperature Range TJ -55 to +175 °C
Thermal Resistance (Junction-to-Case) RθJC 3.3 (Max) °C/W

Pin Configuration

Applications
  • DC-DC Converters
  • Motor Control Circuits
  • Solenoid and Relay Drivers
  • General Purpose Power Switching
Package Include:
1x IRFZ24N N-Channel Power MOSFET Transistor 55V 17A TO-220
Datasheet
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