K1363 N-Channel MOSFET Transistor 8A 900V

Specifications

• Type of Transistor: MOSFET
• Type of Control Channel: N -Channel
• Maximum Power Dissipation (Pd): 90 W
• Maximum Drain-Source Voltage |Vds|: 900 V
• Maximum Gate-Source Voltage |Vgs|: 30 V
• Maximum Drain Current |Id|: 8 A
• Maximum Junction Temperature (Tj): 150 °C
• Total Gate Charge (Qg): 120 nC
• Rise Time (tr): 25 nS
• Drain-Source Capacitance (Cd): 180 pF
• Maximum Drain-Source On-State Resistance (Rds): 1.4 Ohm

K1363 Datasheet