KGT15N60FDA IGBT Transistor TO-220F

KGT15N60FDA IGBT Transistor TO-220F

The KGT15N60FDA IGBT Transistor TO-220F is a high-performance Insulated Gate Bipolar Transistor (IGBT) designed for efficient power switching in various applications. It features a collector-emitter breakdown voltage of 600V, a continuous collector current of 15A, and a power dissipation of 41.6W, making it ideal for industrial and automotive systems. Housed in a TO-220F package, it offers excellent thermal performance and ease of mounting on printed circuit boards. Utilizing Non-Punch Through Trench technology, the KGT15N60FDA provides low switching losses, high energy efficiency, and robust avalanche and short-circuit ruggedness, ensuring reliable operation in demanding environments.

Features:

• High Breakdown Voltage  600V collector-emitter voltage rating for high-voltage applications.
• High Collector Current 15A continuous current handling for robust performance.
• Low Saturation Voltage 1.7V at 15A (typical) for efficient power management.

Pin Configuration:

Pin 1: Gate (G)
Pin 2: Collector (C)
Pin 3: Emitter (E)

Specifications:

Applications:

• Inverters & UPS Systems.
• Motor Drives.

Data sheet:

KGT15N60FDA