Name: MagnaChip MBQ40T120FESTH IGBT Transistor 1200V 80A TO-247
SKU: 3496300159444
Price: 250.00 EGP
Availability: InStock

MagnaChip MBQ40T120FESTH IGBT Transistor 1200V 80A TO-247

The MBQ40T120FESTH from Magnachip Semiconductor is a high speed 1200V Field Stop Trench IGBT rated for a collector current of 80A at T_C = 25°C. It is produced using advanced Magnachip’s Field Stop Trench IGBT Technology, which provides low V_CE(sat), high switching performance and excellent quality.

The device incorporates an ultra soft, fast recovery anti-parallel diode (t_rr = 100ns typ.) and offers high input impedance, ultra narrowed V_F distribution control and a positive temperature coefficient for easy paralleling. This IGBT is intended for PFC, UPS & Inverter applications.

Features

High speed switching & low power loss
V_CE(sat) = 2.0V @ I_C = 40A
High input impedance
t_rr = 100ns (typ.)
Ultra soft, fast recovery anti-parallel diode
Ultra narrowed V_F distribution control
Positive temperature coefficient for easy paralleling

Specifications

Absolute Maximum Ratings

Characteristics	Symbol	Rating	Unit
Collector-emitter voltage	V_CES	1200	V
Gate-emitter voltage	V_GES	±20	V
Collector current @ T_C = 25°C	I_C	80	A
Collector current @ T_C = 100°C	I_C	40	A
Pulsed collector current (pulse time limited by T_jmax)	I_CM	160	A
Diode forward current @ T_C = 100°C	I_F	40	A
Diode pulsed current (pulse time limited by T_jmax)	I_FM	160	A
Power dissipation @ T_C = 25°C	P_D	357	W
Power dissipation @ T_C = 100°C	P_D	142	W
Short circuit withstand time (V_CE = 600V, V_GE = 15V, T_C = 150°C)	t_sc	10	μs
Operating junction and storage temperature range	T_J, T_stg	-55 to +150	°C

Thermal Characteristics

Characteristics	Symbol	Rating	Unit
Thermal resistance, junction-to-ambient	R_θJA	40	°C/W
Thermal resistance, junction-to-case (IGBT)	R_θJC	0.35	°C/W
Thermal resistance, junction-to-case (Diode)	R_θJC	0.8	°C/W

Electrical Characteristics (T_C = 25°C unless otherwise specified)

Characteristics	Symbol	Test Condition	Min	Typ	Max	Unit
Collector-emitter breakdown voltage	BV_CES	I_C = 1mA, V_GE = 0V	1200	–	–	V
Gate-emitter threshold voltage	V_GE(th)	V_CE = V_GE, I_C = 1mA	4.5	5.5	6.5	V
Zero gate voltage collector current	I_CES	V_CE = 1200V, V_GE = 0V	–	–	1	mA
Gate-emitter leakage current	I_GES	V_GE = 20V, V_CE = 0V	–	–	±250	nA
Collector-emitter saturation voltage	V_CE(sat)	I_C = 40A, V_GE = 15V, T_C = 25°C	–	2.0	2.4	V
Collector-emitter saturation voltage	V_CE(sat)	I_C = 40A, V_GE = 15V, T_C = 150°C	–	2.45	–	V
Total gate charge	Q_g	V_CE = 600V, I_C = 40A, V_GE = 15V	–	341	–	nC
Gate-emitter charge	Q_ge	V_CE = 600V, I_C = 40A, V_GE = 15V	–	52	–	nC
Gate-collector charge	Q_gc	V_CE = 600V, I_C = 40A, V_GE = 15V	–	126	–	nC
Input capacitance	C_ies	V_CE = 30V, V_GE = 0V, f = 1MHz	–	6030	–	pF
Reverse transfer capacitance	C_res	V_CE = 30V, V_GE = 0V, f = 1MHz	–	107	–	pF
Output capacitance	C_oes	V_CE = 30V, V_GE = 0V, f = 1MHz	–	206	–	pF

Switching Characteristics (Inductive Load, V_GE = 15V, V_CC = 600V, I_C = 40A, R_G = 10Ω)

Characteristics	Symbol	T_C = 25°C	T_C = 150°C	Unit
Turn-on delay time	t_d(on)	65	70	ns
Rise time	t_r	55	62	ns
Turn-off delay time	t_d(off)	308	325	ns
Fall time	t_f	40	62	ns
Turn-on switching energy	E_on	1.96	2.35	mJ
Turn-off switching energy	E_off	0.54	1.61	mJ
Total switching energy	E_ts	2.50	3.96	mJ

Diode Characteristics (T_C = 25°C unless otherwise specified)

Characteristics	Symbol	Test Condition	Typ	Max	Unit
Forward voltage	V_F	I_F = 40A, T_C = 25°C	2.4	3.0	V
Forward voltage	V_F	I_F = 40A, T_C = 150°C	2.45	–	V
Reverse recovery time	t_rr	I_F = 40A, di/dt = 200A/μs, T_C = 25°C	100	–	ns
Reverse recovery current	I_rr	I_F = 40A, di/dt = 200A/μs, T_C = 25°C	7	–	A
Reverse recovery charge	Q_rr	I_F = 40A, di/dt = 200A/μs, T_C = 25°C	350	–	nC
Reverse recovery time	t_rr	I_F = 40A, di/dt = 200A/μs, T_C = 150°C	180	–	ns
Reverse recovery current	I_rr	I_F = 40A, di/dt = 200A/μs, T_C = 150°C	10	–	A
Reverse recovery charge	Q_rr	I_F = 40A, di/dt = 200A/μs, T_C = 150°C	900	–	nC