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Home›Electronic Components (Through-hole)›Transistors›IGBT Transistors›MagnaChip MBQ40T120FESTH IGBT Transistor 1200V 80A TO-247
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MagnaChip MBQ40T120FESTH IGBT Transistor 1200V 80A TO-247

MagnaChip MBQ40T120FESTH 1200V/80A Field Stop Trench IGBT, TO-247, ultra soft fast recovery diode. For PFC, UPS & inverter applications.

250.00 EGP

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SKU:3496300159444
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MagnaChip MBQ40T120FESTH IGBT Transistor 1200V 80A TO-247

The MBQ40T120FESTH from Magnachip Semiconductor is a high speed 1200V Field Stop Trench IGBT rated for a collector current of 80A at TC = 25°C. It is produced using advanced Magnachip’s Field Stop Trench IGBT Technology, which provides low VCE(sat), high switching performance and excellent quality.

The device incorporates an ultra soft, fast recovery anti-parallel diode (trr = 100ns typ.) and offers high input impedance, ultra narrowed VF distribution control and a positive temperature coefficient for easy paralleling. This IGBT is intended for PFC, UPS & Inverter applications.

Features
  • High speed switching & low power loss
  • VCE(sat) = 2.0V @ IC = 40A
  • High input impedance
  • trr = 100ns (typ.)
  • Ultra soft, fast recovery anti-parallel diode
  • Ultra narrowed VF distribution control
  • Positive temperature coefficient for easy paralleling
Specifications
Absolute Maximum Ratings
Characteristics Symbol Rating Unit
Collector-emitter voltage VCES 1200 V
Gate-emitter voltage VGES ±20 V
Collector current @ TC = 25°C IC 80 A
Collector current @ TC = 100°C IC 40 A
Pulsed collector current (pulse time limited by Tjmax) ICM 160 A
Diode forward current @ TC = 100°C IF 40 A
Diode pulsed current (pulse time limited by Tjmax) IFM 160 A
Power dissipation @ TC = 25°C PD 357 W
Power dissipation @ TC = 100°C PD 142 W
Short circuit withstand time (VCE = 600V, VGE = 15V, TC = 150°C) tsc 10 μs
Operating junction and storage temperature range TJ, Tstg -55 to +150 °C
Thermal Characteristics
Characteristics Symbol Rating Unit
Thermal resistance, junction-to-ambient RθJA 40 °C/W
Thermal resistance, junction-to-case (IGBT) RθJC 0.35 °C/W
Thermal resistance, junction-to-case (Diode) RθJC 0.8 °C/W
Electrical Characteristics (TC = 25°C unless otherwise specified)
Characteristics Symbol Test Condition Min Typ Max Unit
Collector-emitter breakdown voltage BVCES IC = 1mA, VGE = 0V 1200 – – V
Gate-emitter threshold voltage VGE(th) VCE = VGE, IC = 1mA 4.5 5.5 6.5 V
Zero gate voltage collector current ICES VCE = 1200V, VGE = 0V – – 1 mA
Gate-emitter leakage current IGES VGE = 20V, VCE = 0V – – ±250 nA
Collector-emitter saturation voltage VCE(sat) IC = 40A, VGE = 15V, TC = 25°C – 2.0 2.4 V
Collector-emitter saturation voltage VCE(sat) IC = 40A, VGE = 15V, TC = 150°C – 2.45 – V
Total gate charge Qg VCE = 600V, IC = 40A, VGE = 15V – 341 – nC
Gate-emitter charge Qge VCE = 600V, IC = 40A, VGE = 15V – 52 – nC
Gate-collector charge Qgc VCE = 600V, IC = 40A, VGE = 15V – 126 – nC
Input capacitance Cies VCE = 30V, VGE = 0V, f = 1MHz – 6030 – pF
Reverse transfer capacitance Cres VCE = 30V, VGE = 0V, f = 1MHz – 107 – pF
Output capacitance Coes VCE = 30V, VGE = 0V, f = 1MHz – 206 – pF
Switching Characteristics (Inductive Load, VGE = 15V, VCC = 600V, IC = 40A, RG = 10Ω)
Characteristics Symbol TC = 25°C TC = 150°C Unit
Turn-on delay time td(on) 65 70 ns
Rise time tr 55 62 ns
Turn-off delay time td(off) 308 325 ns
Fall time tf 40 62 ns
Turn-on switching energy Eon 1.96 2.35 mJ
Turn-off switching energy Eoff 0.54 1.61 mJ
Total switching energy Ets 2.50 3.96 mJ
Diode Characteristics (TC = 25°C unless otherwise specified)
Characteristics Symbol Test Condition Typ Max Unit
Forward voltage VF IF = 40A, TC = 25°C 2.4 3.0 V
Forward voltage VF IF = 40A, TC = 150°C 2.45 – V
Reverse recovery time trr IF = 40A, di/dt = 200A/μs, TC = 25°C 100 – ns
Reverse recovery current Irr IF = 40A, di/dt = 200A/μs, TC = 25°C 7 – A
Reverse recovery charge Qrr IF = 40A, di/dt = 200A/μs, TC = 25°C 350 – nC
Reverse recovery time trr IF = 40A, di/dt = 200A/μs, TC = 150°C 180 – ns
Reverse recovery current Irr IF = 40A, di/dt = 200A/μs, TC = 150°C 10 – A
Reverse recovery charge Qrr IF = 40A, di/dt = 200A/μs, TC = 150°C 900 – nC

Applications
  • PFC (Power Factor Correction)
  • UPS (Uninterruptible Power Supplies)
  • Inverters
Package Content
  • 1 x MagnaChip MBQ40T120FESTH IGBT Transistor 1200V 80A TO-247
DataSheet
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