Features:
- This device is useful for high-voltage general purpose applications, MJE340 is a TO-126 package NPN silicon BJT transistor designed for high voltage applications.
- The Maximum collector-emitter and collector-base voltage of the transistor are up to 300V which makes it ideal to use in a wide variety of high voltage applications.
- The device can be used with any general high voltage switching application for the max load of 0.5A at DC voltage.
- Additionally, it can also be used for switching in low-power and battery-operated applications.
- MJE340 is not only limited to use for the above-mentioned purposes however it can also be used for amplification purposes, also the 20W collector dissipation makes it ideal to use in many general-purpose audio amplification purposes.
- Minimum Lot-to-Lot variations for robust device performance and reliable operation.
- Complement to the PNP MJE350 Transistor.
Pin Configurations:
Specifications:
| Product Attribute | Attribute Value |
| Datasheet | MJE340 |
| Product Category | Bipolar Transistors – BJT |
| Technology | Si |
| Product Type | BJTs – Bipolar Transistors |
| Serie | MJE340 |
| Configuration | Single |
| Transistor Polarity | NPN |
| Package/Case | TO-126 |
| Mounting Style | Through Hole |
| Number of terminals | 3 |
| Continuous Collector Current | 500 mA |
| Maximum DC Collector Current | 500 mA |
| Collector- Emitter Voltage VCEO (Max) | 300 V |
| Collector- Base Voltage VCBO | 3 V |
| Emitter- Base Voltage VEBO | 3 V |
| Pd – Power Dissipation | 20 W |
| DC Collector/Base Gain hFE Min | 30 |
| Operating Temperature Range | – 65 °C to +150 |
Applications:
- Designed for high voltage and general purpose applications.
- Linear and switching industrial equipment.
Datasheet:
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