MK6264LN-120 8K X 8 64k STANDARD SRAM 100ns IC DIP-28
The MK6264LN-120 is a 64K-bit Static Random Access Memory (SRAM) organized as 8K words by 8 bits. Manufactured by STMicroelectronics using advanced CMOS technology, this IC delivers a fast access time of 120ns, low power consumption, and full compatibility with TTL logic levels. Operating on a single +5V power supply (±10%), it is housed in a standard 28-pin Dual In-line Package (DIP), making it an excellent choice for legacy systems and applications requiring reliable, high-speed memory.
Features
- 120ns Access Time: Ensures rapid data retrieval for time-sensitive applications.
- Fully Static Operation: No external clocks or timing strobes required, simplifying design.
- Equal Access and Cycle Times: Streamlines system timing requirements.
- Low Power Data Retention: Maintains data down to 2V, ideal for power-saving modes.
- TTL and CMOS Compatible: Versatile interfacing with a wide range of logic families.
- Three-State Output: Facilitates bus-oriented designs with high-impedance output control.
- Standard 28-pin DIP Package: Easy integration into through-hole PCB designs.
Specifications
| Parameter | Value |
|---|---|
| Memory Size | 64K bits (8K x 8 organization) |
| Access Time | 120ns |
| Supply Voltage | 5V ± 10% (4.5V to 5.5V) |
| Operating Temperature | 0°C to 70°C |
| Package Type | 28-pin DIP (600 mil) |
| Input/Output Levels | TTL compatible |
| Data Retention Voltage | 2V minimum |
| Standby Mode Current | 500µA max |
Applications
- Microprocessor-Based Systems: Enhances performance in legacy computing platforms.
- Embedded Control Systems: Reliable memory for real-time control applications.
- Data Acquisition and Processing: Fast storage for sensor and instrumentation data.
- Communication Devices: Buffering and temporary storage in telecom equipment.
- Industrial Automation: Durable memory solution for factory automation systems.
Package Content
- 1 x MK6264LN-120 64k SRAM 100ns
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