MLG25N120RK IGBT Transistor for High-Voltage Switching
The MLG25N120RK is a high-performance Insulated Gate Bipolar Transistor designed for high-voltage and high-current power switching applications. It features a collector-emitter breakdown voltage of 1350V, a continuous collector current of 25A, and a power dissipation of 208W, making it suitable for demanding industrial and automotive applications. The device is housed in a TO-247 package, which provides excellent thermal performance and ease of mounting. Utilizing Field Stop technology, it offers improved efficiency and reliability, with a low saturation voltage of 2.5V at 25A, ensuring minimal power loss during operation.
Features:
- 1350V Breakdown Voltage
- Low saturation voltage: VCE(sat), typ=2.5V@IC=25A and TC=25℃
- FS Tench Technology, Positive temperature coefficient
Specifications:
| Attribute | Value |
| Category | Transistors/IGBT Transistors |
| Turn-off Delay Time (Td(off)) | 198ns |
| Power Dissipation (Pd) | 208W |
| Turn-on Delay Time (Td(on)) | 34ns |
| Collector Current (Ic) | 25A |
| Collector-Emitter Breakdown Voltage (Vces) | 1.35kV |
| Input Capacitance (Cies@Vce) | 2.37nF@30V |
| Type | FS(Field Stop) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5.5V@1mA |
| Total Gate Charge (Qg@Ic,Vge) | 142nC@25A,15V |
| Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Vge) | 2.5V@25A,15V |
| Package | TO-247 |
Applications:
- Solar Converters
- Welding Converters
- UPS
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