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Home›Electronic Components (SMD)›SMD Transistor›MMBT2222A 40V 250mW 100@150mA,10V 600mA NPN SOT-23 Bipolar Transistors – BJT
MMBT2222A 40V 250mW 100@150mA,10V 600mA NPN SOT-23 Bipolar Transistors - BJT
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MMBT2222A 40V 250mW 100@150mA,10V 600mA NPN SOT-23 Bipolar Transistors – BJT

1.25 EGP

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0.88 EGP
× MMBT2222A 40V 250mW 100@150mA,10V 600mA NPN SOT-23 Bipolar Transistors - BJT
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Availability: In Stock
SKU:3496300067381
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Manufacturer CBI
Mfr. Part # MMBT2222A 1P
Package SOT-23
Datasheet CBI MMBT2222A 1P
Description 40V 250mW 100@150mA,10V 600mA NPN SOT-23 Bipolar Transistors – BJT ROHS

Specifications

Attribute Value
Category Triode/MOS Tube/Transistor/Bipolar Transistors – BJT
Datasheet  CBI MMBT2222A 1P
RoHS
Collector Cut-Off Current (Icbo) 10nA
Collector-Emitter Breakdown Voltage (Vceo) 40V
Power Dissipation (Pd) 250mW
DC Current Gain (hFE@Ic,Vce) 100@150mA,10V
Collector Current (Ic) 600mA
Transition Frequency (fT) 300MHz
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) 300mV@150mA,15mA
Transistor Type NPN
Operating Temperature +150℃@(Tj)

 

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