Manufacturer | Jiangsu Changjing Electronics Technology Co., Ltd. |
Mfr. Part # | MMBT5551 |
Package | SOT-23 |
Datasheet | Jiangsu Changjing Electronics Technology Co., Ltd. MMBT5551 |
Description | 160V 300mW 200@10mA,5V 600mA NPN SOT-23 Bipolar Transistors – BJT ROHS |
Specifications
Attribute | Value |
Category | Triode/MOS Tube/Transistor/Bipolar Transistors – BJT |
Datasheet | Jiangsu Changjing Electronics Technology Co., Ltd. MMBT5551 |
RoHS | |
Collector Cut-Off Current (Icbo) | 50nA |
Collector-Emitter Breakdown Voltage (Vceo) | 160V |
Power Dissipation (Pd) | 300mW |
DC Current Gain (hFE@Ic,Vce) | 200@10mA,5V |
Collector Current (Ic) | 600mA |
Transition Frequency (fT) | 100MHz |
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) | 200mV@50mA,5mA |
Transistor Type | NPN |
Operating Temperature | +150℃@(Tj) |
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