MMBT5551 G1 160V 300mW 200@10mA,5V 600mA NPN SOT-23 Bipolar Transistors – BJT SMD
1.25 EGP
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Availability:
In Stock
SKU:3496300072972
Specifications
| Attribute |
Value |
| Category |
Triode/MOS Tube/Transistor/Bipolar Transistors – BJT |
| Datasheet |
Jiangsu Changjing Electronics Technology Co., Ltd. MMBT5551 |
| RoHS |
|
| Collector Cut-Off Current (Icbo) |
50nA |
| Collector-Emitter Breakdown Voltage (Vceo) |
160V |
| Power Dissipation (Pd) |
300mW |
| DC Current Gain (hFE@Ic,Vce) |
200@10mA,5V |
| Collector Current (Ic) |
600mA |
| Transition Frequency (fT) |
100MHz |
| Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) |
200mV@50mA,5mA |
| Transistor Type |
NPN |
| Operating Temperature |
+150℃@(Tj) |
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