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MMBT5551 G1 160V 300mW 200@10mA,5V 600mA NPN SOT-23 Bipolar Transistors – BJT SMD

1.25 EGP

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Availability: In Stock
SKU:3496300072972
Manufacturer Jiangsu Changjing Electronics Technology Co., Ltd.
Mfr. Part # MMBT5551
Package SOT-23
Datasheet Jiangsu Changjing Electronics Technology Co., Ltd. MMBT5551
Description 160V 300mW 200@10mA,5V 600mA NPN SOT-23 Bipolar Transistors – BJT ROHS
Specifications
Attribute Value
Category Triode/MOS Tube/Transistor/Bipolar Transistors – BJT
Datasheet  Jiangsu Changjing Electronics Technology Co., Ltd. MMBT5551
RoHS
Collector Cut-Off Current (Icbo) 50nA
Collector-Emitter Breakdown Voltage (Vceo) 160V
Power Dissipation (Pd) 300mW
DC Current Gain (hFE@Ic,Vce) 200@10mA,5V
Collector Current (Ic) 600mA
Transition Frequency (fT) 100MHz
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) 200mV@50mA,5mA
Transistor Type NPN
Operating Temperature +150℃@(Tj)

 

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