MMP60R580P N-Channel MOSFET Transistor 600V 8A TO-220F

MMP60R580P N-Channel MOSFET Transistor 600V 8A TO-220F

The MMP60R580P is a high-voltage N-channel power MOSFET fabricated with Magnachip’s super-junction technology to deliver low on-resistance and reduced switching losses for efficient, low-EMI operation in high-voltage converters and motor control stages. It is rated for 600V drain-source voltage, supports an 8A continuous drain current at TC=25 °C, and is supplied in a TO-220F (insulated) style package suitable for through-hole mounting with robust thermal performance.

Features

• 600V drain-source voltage rating for high-voltage switching applications.
• Continuous drain current 8A at TC=25°C with 32A pulsed capability for transient loads.
• Low RDS(on) for reduced conduction losses (typical RDS(on) ≈0.53 Ω at VGS=10 V, ID=2.5 A).
• Low total gate charge (Qg typ. 18 nC) enabling faster switching and lower gate drive losses.
• 100% avalanche tested with single-pulse avalanche energy rating for rugged inductive switching.
• Integrated body diode with specified forward drop and reverse-recovery characteristics for snubber and synchronous-rectifier considerations.

Specifications

Notes:

1. Pulse width t_p limited by T_j,max.
2. I_SD ≤ I_D, V_{DS peak} ≤ V_BR(DSS).
3. For full electrical specifications, graphs, or test circuits, check the datasheet down below.

Applications

• Power factor correction (PFC) stages and high-voltage SMPS primary switching. .
• DC–DC converters and adapter power supplies. .
• Motor drives and inductive load switching where avalanche ruggedness is required. .
• Synchronous-rectifier stages and high-voltage switching applications demanding low switching losses.

Package Contents

• 1x MMP60R580P N-Channel MOSFET Transistor TO-220F.

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