MMP60R580P N-Channel MOSFET Transistor 600V 8A TO-220F
The MMP60R580P is a high-voltage N-channel power MOSFET fabricated with Magnachip’s super-junction technology to deliver low on-resistance and reduced switching losses for efficient, low-EMI operation in high-voltage converters and motor control stages. It is rated for 600V drain-source voltage, supports an 8A continuous drain current at TC=25 °C, and is supplied in a TO-220F (insulated) style package suitable for through-hole mounting with robust thermal performance.
Features
- 600V drain-source voltage rating for high-voltage switching applications.
- Continuous drain current 8A at TC=25°C with 32A pulsed capability for transient loads.
- Low RDS(on) for reduced conduction losses (typical RDS(on) ≈0.53 Ω at VGS=10 V, ID=2.5 A).
- Low total gate charge (Qg typ. 18 nC) enabling faster switching and lower gate drive losses.
- 100% avalanche tested with single-pulse avalanche energy rating for rugged inductive switching.
- Integrated body diode with specified forward drop and reverse-recovery characteristics for snubber and synchronous-rectifier considerations.
Specifications
| Parameter | Symbol | Rating | Unit |
|---|---|---|---|
| Drain – Source voltage | VDSS | 600 | V |
| Gate – Source voltage | VGSS | ±30 | V |
| Continuous drain current | ID | 8 (TC=25°C) 5 (TC=100°C) |
A |
| Pulsed drain current (1) | IDM | 32 | A |
| Power dissipation | PD | 70 | W |
| Single-pulse avalanche energy | EAS | 170 | mJ |
| MOSFET dv/dt ruggedness | dv/dt | 50 | V/ns |
| Diode dv/dt ruggedness | dv/dt | 15 | V/ns |
| Storage temperature | Tstg | −55 to +150 | °C |
| Maximum operating junction temperature | Tj | 150 | °C |
Notes:
- Pulse width tp limited by Tj,max.
- ISD ≤ ID, VDS peak ≤ VBR(DSS).
- For full electrical specifications, graphs, or test circuits, check the datasheet down below.
Applications
- Power factor correction (PFC) stages and high-voltage SMPS primary switching. .
- DC–DC converters and adapter power supplies. .
- Motor drives and inductive load switching where avalanche ruggedness is required. .
- Synchronous-rectifier stages and high-voltage switching applications demanding low switching losses.
Package Contents
- 1x MMP60R580P N-Channel MOSFET Transistor TO-220F.
Documents
| Datasheet | MMP60R580P |
