IRF720 N-Channel Power MOSFET 400V 3.3A 1.8Ω TO-220AB
The IRF720 is an advanced N-Channel enhancement mode silicon gate power field effect transistor. It is specifically designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These power MOSFETs feature high input impedance, nanosecond switching speeds, and linear transfer characteristics. The device is engineered for demanding applications that require high speed and low gate drive power, allowing it to be operated directly from integrated circuits.
Features
- N-Channel Enhancement Mode
- Single Pulse Avalanche Energy Rated
- SOA is Power Dissipation Limited
- Nanosecond Switching Speeds
- Linear Transfer Characteristics
- High Input Impedance
Specifications
| Parameter | Value |
|---|---|
| Drain to Source Voltage | 400V |
| Drain to Gate Voltage | 400V |
| Continuous Drain Current (TC=25°C) | 3.3A |
| Pulsed Drain Current | 13A |
| Gate to Source Voltage | ±20V |
| Maximum Power Dissipation | 50W |
| Drain to Source On Resistance (Max) | 1.8Ω |
| Gate Threshold Voltage | 2.0V to 4.0V |
| Single Pulse Avalanche Energy | 190mJ |
| Total Gate Charge (Max) | 20nC |
| Input Capacitance (Typ) | 360pF |
| Thermal Resistance, Junction to Case | 2.5°C/W |
| Operating and Storage Temperature | -55 to 150°C |
| Package Type | TO-220AB |
Applications
- Switching Regulators
- Switching Converters
- Motor Drivers
- Relay Drivers
- Drivers for High Power Bipolar Switching Transistors
Package Content
- 1 x IRF720 N-Channel Power MOSFET 400V 3.3A 1.8Ω TO-220AB
