MN4164P-12A DRAM 64K x1 Bit 120ns IC DIP-16

MN4164P-12A DRAM 64K x1 Bit 120ns IC DIP-16

The MN4164P-12A is a single-chip dynamic RAM organized as 64K × 1 bit with a 120 ns access time, provided in a 16-pin DIP package. It implements the standard multiplexed row/column address scheme (RAS/CAS) used by early 64K DRAMs and is intended for use as general purpose byte-serial memory in small microcomputer and embedded systems designs. The device’s single-bit data path and simple control signals make it suitable where multiple devices are combined to form wider buses.

Reads and writes are controlled with the RAS/CAS timing sequence; addresses are applied as a multiplexed pair (row then column). The device requires periodic refresh of stored data (via standard RAS-only or RAS/CAS refresh cycles) and provides an active I/O pin that floats when deselected. Typical timing and control requirements align with other 4164-class DRAMs (120 ns access characteristic).

In practice the MN4164P-12A is used in small memory expansion banks or as part of multi-chip assemblies to create 8/16-bit wide modules. Its DIP-16 package makes it easy to prototype on breadboards or through-hole PCBs. For exact electrical limits, timing diagrams, and recommended refresh/operating conditions, refer to the scanned datasheet.

Features:

• 64K × 1-bit organization (65536 words of 1 bit each).
• 120 ns access time.
• Multiplexed row/column address inputs (RAS/CAS control).
• Single-bit data I/O (I/O pin that is active during read/write).
• Standard 16-pin DIP through-hole package.
• TTL-compatible control and address inputs.
• Supports standard RAS-only and RAS/CAS refresh cycles.

Specifications:

Pin Configuration:

Applications:

• Memory expansion for microprocessors.
• Small embedded system main/working memory.
• Multi-chip memory banks for 8/16-bit systems.
• Educational/prototyping through-hole DRAM modules.

Package Contents:

• 1x MN4164P-12A DRAM 64K x1 Bit 120ns IC DIP-16

Datasheet