GOODWORK SI2302 N-Channel MOSFET Transistor SMD 1.1V @ 250µA, SOT-23
The GOODWORK SI2302 N-Channel MOSFET Transistor SMD 1.1V @ 250µA, SOT-23 is a compact and efficient transistor designed for low-voltage switching applications. With a gate threshold voltage (Vgs(th)) of just 1.1V, it ensures reliable operation in low-power circuits. The transistor features a maximum drain-source voltage (Vds) of 20V and can handle a continuous drain current (Id) of up to 2.3A, making it suitable for a wide range of electronic devices.
Features:
- High density cell design for low RDS(ON)
- Voltage controlled small signal switch
- Rugged and reliable
- High saturation current capability
Specifications:
| Category | Discrete Semiconductors/FETs, MOSFETs/Single FETs, MOSFETs |
|---|---|
| Manufacturer | GOODWORK |
| Package | SOT-23 |
| Drain to Source Voltage | 20V |
| Current – Continuous Drain (Id) | 4.3A |
| Pd – Power Dissipation | 1.2W |
| RDS(on) | 50mΩ@2.5V |
| Gate Threshold Voltage (Vgs(th)) | 1.1V@250uA |
| Type | N-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 80pF |
| Number | 1 N-Channel |
| Input Capacitance (Ciss) | 300pF |
| Gate Charge (Qg) | 10nC@4.5V |
Foot Print:
Applications:
- Used in precision signal processing and filtering circuits.
- Ideal for low-power voltage regulation.
- Suitable for consumer electronics like smartphones, tablets, and IoT devices.
- Common in automotive electronics, where temperature stability is crucial.
- Applied in medical devices that require reliable performance under varying environmental conditions.
Documents:
| Attribute | Value |
|---|---|
| Datasheet | SI2302 |
| Certifications | Quality Management System Environmental Management System |
| Certifications | REACH |