MPG150N10P N-Channel Power MOSFET 100V 150A TO-220
The MPG150N10P uses advanced trench technology to provide excellent RDS(ON) and low gate charge. Featuring a high density cell design for lower RDSon and special process technology for high ESD capability, it offers good stability and uniformity with high EAS. The excellent package ensures good heat dissipation, making it highly reliable for a wide variety of demanding power applications.
Features
- High Performance: VDS = 100V, ID = 150A, RDS(ON) < 6mΩ @ VGS=10V
- Advanced Technology: Uses advanced trench technology and high density cell design for lower Rdson
- Robust Protection: Special process technology for high ESD capability
- Avalanche Rated: Fully characterized avalanche voltage and current
- Highly Reliable: Good stability and uniformity with high EAS (Single pulse avalanche energy: 1200 mJ)
- Thermal Efficiency: Excellent package for good heat dissipation
Specifications
Absolute Maximum Ratings
| Parameter |
Symbol |
Limit |
Unit |
| Drain-Source Voltage |
VDS |
100 |
V |
| Gate-Source Voltage |
VGS |
±20 |
V |
| Drain Current-Pulsed |
IDM |
720 |
A |
| Maximum Power Dissipation (Tc=25℃) |
PD |
211 |
W |
| Single Pulse Avalanche Energy |
EAS |
1200 |
mJ |
| Operating Junction and Storage Temperature Range |
TJ, TSTG |
-55 To 175 |
℃ |
Thermal Characteristics
| Parameter |
Symbol |
Value |
Unit |
| Thermal Resistance, Junction-to-Case |
RθJC |
0.36 |
℃/W |
Electrical Characteristics
| Parameter |
Symbol |
Condition |
Min |
Typ |
Max |
Unit |
| Drain-Source Breakdown Voltage |
BVDSS |
VGS=0V, ID=250μA |
100 |
– |
– |
V |
| Zero Gate Voltage Drain Current |
IDSS |
VDS=100V, VGS=0V |
– |
– |
1 |
μA |
| Gate-Body Leakage Current |
IGSS |
VGS=±20V, VDS=0V |
– |
– |
±100 |
nA |
| Gate Threshold Voltage |
VGS(th) |
VDS=VGS, ID=250μA |
2 |
3 |
4 |
V |
| Drain-Source On-State Resistance |
RDS(ON) |
VGS=10V, ID=50A |
– |
5 |
6 |
mΩ |
| Forward Transconductance |
gFS |
VDS=10V, ID=40A |
170 |
– |
– |
S |
| Input Capacitance |
Ciss |
VDS=25V, VGS=0V, f=1.0MHz |
– |
6600 |
– |
pF |
| Output Capacitance |
Coss |
VDS=25V, VGS=0V, f=1.0MHz |
– |
590 |
– |
pF |
| Reverse Transfer Capacitance |
Crss |
VDS=25V, VGS=0V, f=1.0MHz |
– |
210 |
– |
pF |
| Turn-on Delay Time |
td(on) |
VDD=50V, ID=20A, VGS=10V, RGEN=3Ω |
– |
29 |
– |
nS |
| Turn-on Rise Time |
tr |
VDD=50V, ID=20A, VGS=10V, RGEN=3Ω |
– |
23 |
– |
nS |
| Turn-Off Delay Time |
td(off) |
VDD=50V, ID=20A, VGS=10V, RGEN=3Ω |
– |
44 |
– |
nS |
| Turn-Off Fall Time |
tf |
VDD=50V, ID=20A, VGS=10V, RGEN=3Ω |
– |
15 |
– |
nS |
| Total Gate Charge |
Qg |
VDS=50V, ID=30A, VGS=10V |
– |
108 |
– |
nC |
| Gate-Source Charge |
Qgs |
VDS=50V, ID=30A, VGS=10V |
– |
29 |
– |
nC |
| Gate-Drain Charge |
Qgd |
VDS=50V, ID=30A, VGS=10V |
– |
40 |
– |
nC |
| Diode Forward Voltage |
VSD |
VGS=0V, IS=50A |
– |
– |
1.2 |
V |
Applications
- Power switching applications
- Hard switched and High frequency circuits
- Uninterruptible power supply (UPS)
Package Content
- 1 x MPG150N10P N-Channel Power MOSFET 100V 150A TO-220
DataSheet
