Specifications:
- Type Designator: MTP3N60
- Type of Transistor: MOSFET
- Type of Control Channel: N -Channel
- Maximum Power Dissipation (Pd): 100 W
- Maximum Drain-Source Voltage |Vds|: 600 V
- Maximum Gate-Source Voltage |Vgs|: 20 V
- Maximum Drain Current |Id|: 3.9 A
- Maximum Junction Temperature (Tj): 150 °C
- Drain-Source Capacitance (Cd): 800 pF
- Maximum Drain-Source On-State Resistance (Rds): 2.5 Ohm
- Package: TO-220
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