MTP6N60 N-Channel MOSFET Transistor 600V 6A 1.2Ω@3A,10V 125W TO-220

600V, 6A N-Channel MOSFET (TO-220). Ideal for high-efficiency switch-mode power supplies. Features 1.2 RDS(on) and fast switching.

30.00 EGP

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Availability: In Stock
SKU:3496300086535
MTP6N60 N-Channel MOSFET Transistor 600V 6A 1.2Ω@3A,10V 125W TO-220

The MTP6N60 is an N-Channel MOSFET transistor housed in a TO-220 package. It is specifically designed for use in high-efficiency switch-mode power supplies. This component features simple drive requirements and fast switching capabilities, making it a reliable choice for power management applications.

✅Features
  • Drain Current: ID = 6A (at TC = 25°C)
  • Drain-Source Voltage: VDSS = 600V (Min)
  • Static Drain-Source On-Resistance: RDS(on) = 1.2 Ω (Max)
  • Avalanche Energy Specified
  • Fast Switching
  • Simple Drive Requirements
📜📚Specifications
Absolute Maximum Ratings (Ta = 25°C)
Symbol Parameter Value Unit
VDSS Drain-Source Voltage 600 V
VGS Gate-Source Voltage (Continuous) ±20 V
ID Drain Current (Continuous) 6 A
IDM Drain Current (Single Pulsed) 24 A
PD Total Dissipation (at Tc = 25°C) 125 W
Tj Max. Operating Junction Temperature 150 °C
Tstg Storage Temperature -55 ~ 150 °C
Electrical Characteristics (TC = 25°C)
Symbol Parameter Conditions Min Max Unit
V(BR)DSS Drain-Source Breakdown Voltage VGS=0, ID=0.25mA 600 V
VGS(th) Gate Threshold Voltage VDS=VGS, ID=0.25mA 2 4 V
RDS(on) Drain-Source On-Resistance VGS=10V, ID=3A 1.2 Ω
IGSS Gate-Body Leakage Current VGS=±20V, VDS=0 ±100 nA
IDSS Zero Gate Voltage Drain Current VDS=600V, VGS=0 1 μA
VSD Forward On-Voltage IS=6A, VGS=0 1.8 V
Thermal Characteristics
Symbol Parameter Max Unit
Rth jc Thermal Resistance, Junction to Case 1 °C/W
Rth j-a Thermal Resistance, Junction to Ambient 62.5 °C/W

⚓Pin Configuration
  • Pin 1: Gate
  • Pin 2: Drain
  • Pin 3: Source
💻Applications
  • High-efficiency switch-mode power supply.
📖DataSheet

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