N-Channel MOSFET Transistor 2SK1531
The 2SK1531 is a silicon N-Channel Enhancement-mode Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) designed by Toshiba, belonging to their t-MOS III.5 technology family. It functions as a voltage-controlled electronic switch, specifically engineered to handle significant power levels efficiently in demanding switching applications.
This transistor is characterized by its high blocking voltage capability (500V) combined with a remarkably low resistance when turned on, minimizing power loss during conduction. It also exhibits a high transconductance, enabling strong current control with relatively small gate voltage changes. These electrical traits are complemented by specified switching times and gate charge parameters, defining its dynamic behavior during turn-on and turn-off transitions.
Housed in a robust TO-264 package (JEDEC SC-65, Toshiba 2-16C1B) with the drain connected to the integral metal tab for heatsinking, it weighs 4.6 grams. Critical thermal resistance values (channel-to-case and channel-to-ambient) are defined to manage the significant power dissipation (up to 150W) this device can handle, requiring careful thermal design and handling due to its electrostatic sensitivity.
Features:
- Low Drain-Source ON Resistance.
- High Forward Transfer Admittance.
- Low Leakage Current.
- Enhancement-Mode.
Specifications:
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Condition |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDSS | – | – | 500 | V | |
| Gate-Source Voltage | VGSS | – | – | ±30 | V | |
| Drain Current (DC) | ID | – | – | 15 | A | |
| Drain Current (Pulse) | IDM | – | – | 60 | A | |
| Drain Power Dissipation | PD | – | – | 150 | W | Tc = 25°C |
| Channel Temperature | Tch | – | – | 150 | °C | |
| Key Electrical Characteristics | ||||||
| Drain-Source ON Resistance | RDS(on) | – | 0.38 | 0.45 | Ω | ID=7A, VGS=10V |
| Gate Threshold Voltage | Vth | 2.0 | – | 4.0 | V | VDS=10V, ID=1mA |
| Forward Transfer Admittance | Yfs | 6.0 | 7.0 | – | S | VDS=10V, ID=7A |
| Drain Cut-off Current | IDSS | – | – | 300 | μA | VDS=500V, VGS=0V |
| Total Gate Charge | Qg | – | 60 | 75 | nC | VDD=40V, VGS=10V, ID=15A |
| Diode Forward Voltage | VSD | – | – | 1.7 | V | ISD=15A, VGS=0V |
| Thermal Characteristics | ||||||
| Thermal Resistance (Ch to Case) | Rth(ch-c) | – | – | 0.833 | °C/W |
Applications:
- High Speed, High Current DC-DC Converters.
- Relay Drive.
- Motor Drive.
Package Contents:
- 1x N-Channel MOSFET Transistor 2SK1531