Power IGBT Transistor FGL80N120 TO−247−3LD 1200V 80A

Empower Your Systems: FGL80N120 IGBT Transistor for High-Efficiency Power Switching

Features:

• High-Speed Switching: Optimized for rapid operation with minimal energy loss.
• Low Saturation Voltage: VCE(sat) of 2.6V at 40A collector current.
• High Input Impedance: Simplifies drive requirements.
• Integrated Fast Recovery Diode: Reverse recovery time (trr) of 75ns.

Specifications:

• Collector-Emitter Breakdown Voltage (VCE(sus)): 1200V
• Gate-Emitter Threshold Voltage (VGE(th)): 4.5V
• Maximum Collector Current (IC): 80A at 25°C
• Maximum Gate-Emitter Voltage (VGE): ±20V
• Thermal Resistance Junction-to-Case (RθJC): 0.5°C/W
• Operating Junction Temperature (TJ): -55°C to +150°C

Applications:

• Power supplies
• Motor controls
• DC-DC converters
• Inverters
• Audio amplifiers

Document:

Data sheet