SGT60N60FD2 Field Stop IGBT Transistor 600V 60A TO-247

60A, 600V FIELD STOP IGBT

SGT60N60FD2 adopts Field Stop IGBT technology, offer the optimum performance for induction Heating, UPS, SMPS and PFC application.

Features

• 60A, 600V,VCE(sat)(typ.)=2.2V@IC=60A
• Low conduction loss
• Fast switching
• High input impedance

Specifications

• Type Designator: SGT60N60FD2
• Type: IGBT + Anti-Parallel Diode
• Type of IGBT Channel: N
• Pc – Maximum Power Dissipation: 321W
• |Vce| – Maximum Collector-Emitter Voltage: 600 V
• |Vge| – Maximum Gate-Emitter Voltage: 20 V
• |Ic| – Maximum Collector Current: 120 A @25℃
• |VCEsat| – Collector-Emitter saturation Voltage, typ: 2.2 V @25℃
• |VGEth| – Maximum G-E Threshold Voltage: 6.5 V
• Tj – Maximum Junction Temperature: 175 ℃
• tr – Rise Time, typ: 142nS
• Coes – Output Capacitance, typ: 294 pF
• Qg – Total Gate Charge, typ: 179 nC
• Package: TO-247-3L

60N60FD Datasheet