Silan 40N60NPFD Field Stop IGBT Transistor 600V 40A TO-3P
The SGT40N60NPFDPN from Silan Microelectronics is a 40A, 600V Field Stop IGBT in a TO-3P package. Using Field Stop IGBT technology, it offers the optimum performance for induction heating, UPS, SMPS and PFC applications. The device combines low conduction loss (VCE(sat) typ. 1.8V @ IC = 40A) with fast switching and high input impedance, and features an integrated fast recovery diode (FRD) with a typical reverse recovery time of 32ns.
Features
- 40A, 600V, VCE(sat) (typ.) = 1.8V @ IC = 40A
- Low conduction loss
- Fast switching
- High input impedance
Specifications
Absolute Maximum Ratings (TC = 25°C unless otherwise noted)
| Parameter | Symbol | Ratings | Units |
|---|---|---|---|
| Collector to Emitter Voltage | VCE | 600 | V |
| Gate to Emitter Voltage | VGE | ±20 | V |
| Collector Current (TC = 25°C) | IC | 80 | A |
| Collector Current (TC = 100°C) | IC | 40 | A |
| Pulsed Collector Current | ICM | 120 | A |
| Maximum Power Dissipation (TC = 25°C) | PD | 290 | W |
| Power Dissipation Derating | PD | 2.32 | W/°C |
| Operating Junction Temperature | TJ | -55 to +175 | °C |
| Storage Temperature Range | Tstg | -55 to +175 | °C |
Thermal Characteristics
| Parameter | Symbol | Ratings | Units |
|---|---|---|---|
| Thermal Resistance, Junction to Case (IGBT) | RθJC | 0.24 | °C/W |
| Thermal Resistance, Junction to Case (FRD) | RθJC | 1.4 | °C/W |
| Thermal Resistance, Junction to Ambient | RθJA | 35.5 | °C/W |
Electrical Characteristics – IGBT (TC = 25°C unless otherwise noted)
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|---|
| Collector to Emitter Breakdown Voltage | BVCE | VGE = 0V, IC = 250µA | 600 | – | – | V |
| C-E Leakage Current | ICES | VCE = 600V, VGE = 0V | – | – | 200 | µA |
| G-E Leakage Current | IGES | VGE = 20V, VCE = 0V | – | – | ±500 | nA |
| G-E Threshold Voltage | VGE(th) | IC = 250µA, VCE = VGE | 4.0 | 5.0 | 6.5 | V |
| Collector to Emitter Saturation Voltage | VCE(sat) | IC = 40A, VGE = 15V | – | 1.8 | 2.7 | V |
| Collector to Emitter Saturation Voltage | VCE(sat) | IC = 40A, VGE = 15V, TC = 125°C | – | 2.1 | – | V |
| Input Capacitance | Cies | VCE = 30V, VGE = 0V, f = 1MHz | – | 1850 | – | pF |
| Output Capacitance | Coes | VCE = 30V, VGE = 0V, f = 1MHz | – | 180 | – | pF |
| Reverse Transfer Capacitance | Cres | VCE = 30V, VGE = 0V, f = 1MHz | – | 50 | – | pF |
| Turn-On Delay Time | Td(on) | VCE = 400V, IC = 40A, Rg = 10Ω, VGE = 15V, inductive load | – | 18 | – | ns |
| Rise Time | Tr | VCE = 400V, IC = 40A, Rg = 10Ω, VGE = 15V, inductive load | – | 80 | – | ns |
| Turn-Off Delay Time | Td(off) | VCE = 400V, IC = 40A, Rg = 10Ω, VGE = 15V, inductive load | – | 110 | – | ns |
| Fall Time | Tf | VCE = 400V, IC = 40A, Rg = 10Ω, VGE = 15V, inductive load | – | 105 | – | ns |
| Turn-On Switching Loss | Eon | VCE = 400V, IC = 40A, Rg = 10Ω, VGE = 15V, inductive load | – | 1.87 | – | mJ |
| Turn-Off Switching Loss | Eoff | VCE = 400V, IC = 40A, Rg = 10Ω, VGE = 15V, inductive load | – | 0.68 | – | mJ |
| Total Switching Loss | Est | VCE = 400V, IC = 40A, Rg = 10Ω, VGE = 15V, inductive load | – | 2.55 | – | mJ |
| Total Gate Charge | Qg | VCE = 300V, IC = 20A, VGE = 15V | – | 100 | – | nC |
| Gate to Emitter Charge | Qge | VCE = 300V, IC = 20A, VGE = 15V | – | 11 | – | nC |
| Gate to Collector Charge | Qgc | VCE = 300V, IC = 20A, VGE = 15V | – | 52 | – | nC |
Electrical Characteristics – FRD (TC = 25°C unless otherwise noted)
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|---|
| Diode Forward Voltage | Vfm | IF = 20A, TC = 25°C | – | 1.9 | 2.6 | V |
| Diode Forward Voltage | Vfm | IF = 20A, TC = 125°C | – | 1.5 | – | V |
| Diode Reverse Recovery Time | Trr | IES = 20A, dIES/dt = 200A/µs | – | 32 | – | ns |
| Diode Reverse Recovery Charge | Qrr | IES = 20A, dIES/dt = 200A/µs | – | 74 | – | nC |
Applications
- Induction heating
- UPS (uninterruptible power supply)
- SMPS (switched-mode power supply)
- PFC (power factor correction)
Package Content
- 1 x Silan 40N60NPFD Field Stop IGBT Transistor 600V 40A TO-3P