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SS8550 Y2 Bipolar Transistors – BJT SMD 25V 300mW 120@100mA,1V 1.5A PNP SOT-23

1.25 EGP

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1.25 EGP
100 - 499
1.13 EGP
500 - 999
1.06 EGP
1000 - 4999
0.94 EGP
5000+
0.81 EGP
10 × SS8550 Y2 Bipolar Transistors - BJT SMD 25V 300mW 120@100mA,1V 1.5A PNP SOT-23
12.50 EGP
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Availability: In Stock
SKU:3496300072064
ManufacturerJiangsu Changjing Electronics Technology Co., Ltd.
Mfr. Part #SS8550
PackageSOT-23
DatasheetJiangsu Changjing Electronics Technology Co., Ltd. SS8550
Description25V 300mW 120@100mA,1V 1.5A PNP SOT-23 Bipolar Transistors – BJT ROHS
Specifications
AttributeValue
CategoryTriode/MOS Tube/Transistor/Bipolar Transistors – BJT
Datasheet Jiangsu Changjing Electronics Technology Co., Ltd. SS8550
RoHS
Collector Cut-Off Current (Icbo)100nA
Collector-Emitter Breakdown Voltage (Vceo)25V
Power Dissipation (Pd)300mW
DC Current Gain (hFE@Ic,Vce)120@100mA,1V
Collector Current (Ic)1.5A
Transition Frequency (fT)100MHz
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib)500mV@800mA,80mA
Transistor TypePNP
Operating Temperature+150℃@(Tj)

 

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