SS8550 Y2 Bipolar Transistors – BJT SMD 25V 300mW 120@100mA,1V 1.5A PNP SOT-23
1.25 EGP
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Availability:
In Stock
SKU:3496300072064
Specifications
| Attribute |
Value |
| Category |
Triode/MOS Tube/Transistor/Bipolar Transistors – BJT |
| Datasheet |
Jiangsu Changjing Electronics Technology Co., Ltd. SS8550 |
| RoHS |
|
| Collector Cut-Off Current (Icbo) |
100nA |
| Collector-Emitter Breakdown Voltage (Vceo) |
25V |
| Power Dissipation (Pd) |
300mW |
| DC Current Gain (hFE@Ic,Vce) |
120@100mA,1V |
| Collector Current (Ic) |
1.5A |
| Transition Frequency (fT) |
100MHz |
| Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) |
500mV@800mA,80mA |
| Transistor Type |
PNP |
| Operating Temperature |
+150℃@(Tj) |
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