Description
The device is manufactured using high-voltage multi-epitaxial planar technology for high switching speeds and high-voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA.
Features
- High voltage capability
- Low spread of dynamic parameters
- Very high switching speed
Applications
- Electronic ballast for fluorescent lighting (CFL)
- SMPS for battery charger
Characteristics of ST13003 Transistor
- Type: NPN
- Collector-Emitter Voltage, max: 400 V
- Collector-Base Voltage, max: 700 V
- Emitter-Base Voltage, max: 9 V
- Collector Current − Continuous, max: 1.5 A
- Collector Dissipation: 40 W
- DC Current Gain (hfe): 8 to 20 (IC = 0.5 A , VCE = 2 V)
- DC Current Gain (hfe): 5 to 25 (IC = 1 A , VCE = 2 V)
- Operating Junction Temperature Range: -40 to +150 °C
- Package: SOT-32
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