Description
The devices are manufactured in planar technology with a “base island” layout and monolithic Darlington configuration. The resulting transistors show exceptional high gain performance coupled with very low saturation voltage.
Features
- The low collector-emitter saturation voltage
- Complementary NPN – PNP transistors
Applications
- General purpose linear and switching
Technical Specifications
| Physical | |
| Case/Package | TO-220 |
| Contact Plating | Tin |
| Mount | Through Hole |
| Number of Pins | 3 |
| Technical | |
| Collector Base Voltage (VCBO) | 100 V |
| Collector Emitter Breakdown Voltage | 100 V |
| Collector Emitter Saturation Voltage | 2 V |
| Collector Emitter Voltage (VCEO) | 100 V |
| Current Rating | 5 A |
| Element Configuration | Single |
| Emitter Base Voltage (VEBO) | 5 V |
| hFE Min | 1000 |
| Max Collector Current | 5 A |
| Max Junction Temperature (Tj) | 150 °C |
| Max Operating Temperature | 150 °C |
| Max Power Dissipation | 65 W |
| Min Operating Temperature | -65 °C |
| Number of Elements | 1 |
| Polarity | NPN |
| Power Dissipation | 2 W |
| Voltage Rating (DC) | 100 V |
Tip122 Datasheet
