TIP140 NPN Power Darlington Transistor 60V 10A TO-247-3
The TIP140 is an NPN Darlington silicon power transistor designed for robust general-purpose amplification and low-frequency switching. Packaged in TO-247, the TIP140 integrates two transistors monolithically to deliver very high DC current gain with a single control input, making it suitable where large collector currents must be switched or amplified with modest base drive.
Thanks to its Darlington pair construction and built-in base-emitter shunt resistor, the device simplifies circuit design by reducing external bias components and improving stability under load. The transistor is rated for substantial power handling when properly mounted to a heatsink, and typical on-state voltages reflect the Darlington topology’s higher saturation compared with single transistors.
Mechanically available in TO-247 (the TO-247 package is the primary offering), the TIP140 targets power control roles such as motor drivers, power amplifiers, and switching regulators where a rugged, high-gain, high-current NPN device is required. Thermal and safe-operating-area graphs in the datasheet guide reliable use at elevated currents and voltages.
Features:
- High DC current gain Min hFE = 1000 @ IC = 5.0 A, VCE = 4 V.
- Collector-Emitter sustaining voltage VCEO(sus) = 60 V (TIP140).
- Monolithic Darlington construction with built-in base-emitter shunt resistor.
- 10 A continuous collector current capability (with appropriate mounting/heatsink).
- High total power dissipation rating (125 W @ TC = 25°C) when attached to a proper heatsink.
- Low junction-to-case thermal resistance RθJC = 1.0 °C/W.
- Pb-Free device (lead-free package available).
Specifications:
| Parameter | Value |
|---|---|
| Transistor Type: | NPN Darlington |
| Package Type: | TO-247 |
| Collector-Emitter Voltage (VCEO): | 60 V |
| Collector-Base Voltage (VCB): | 60 V |
| Emitter-Base Voltage (VEB): | 5 V |
| Continuous Collector Current (IC): | 10 A |
| Peak Collector Current (ICM): | 15 A |
| Continuous Base Current (IB): | 0.5 A |
| Total Power Dissipation (PD) at Tc = 25°C: | 125 W |
| DC Current Gain (hFE) (at IC = 5.0 A, VCE = 4.0 V): | 1000 (Min) |
| Collector-Emitter Saturation Voltage (VCE(sat)) (at IC = 5.0 A, IB = 10 mA): | 2.0 V (Max) |
| Operating and Storage Junction Temperature Range (TJ, Tstg): | -65 to +150 °C |
| Thermal Resistance, Junction-to-Case (RJC) | 1.0 °C/W |
Pinout:

Applications:
- General-Purpose Amplifiers.
- Low-Speed Switching.
- Power Linear Applications.
- Motor Drivers.
- Audio Amplifiers.
Package Content:
- 1x TIP140 NPN Power Darlington Transistor 60V 10A TO-247-3


