TIP141 NPN Darlington Transistor 80V 10A TO-218
The TIP141 is an NPN Darlington silicon power transistor offered in the TO-218 mechanical package. Constructed as a monolithic Darlington pair with an internal base-emitter shunt resistor, it provides very high DC current gain so large collector currents can be driven with modest base drive. The device is intended for robust, low-frequency power tasks where simplicity of drive and high gain are valuable.
Electrically, the TIP141 is rated higher than the TIP140 in voltage its collector-emitter sustaining voltage is specified at 80 V while still supporting the same continuous collector current levels typical of the family. The Darlington topology produces higher saturation voltage than single transistors, so designers compensate with heatsinking and appropriate drive to manage on-state dissipation.
Mechanically available in the TO-218 outline, the TIP141 is suited to applications such as general amplifiers and low-frequency switching where moderate voltages (up to ~80 V) and high current capability are needed. Thermal and SOA graphs in the datasheet guide safe use at elevated currents and temperatures.
Features:
- Monolithic Darlington construction with built-in base-emitter shunt resistor.
- High DC current gain Min hFE = 1000 @ IC = 5 A, VCE = 4 V.
- Collector-Emitter sustaining voltage VCEO(sus) = 80 V (TIP141).
- 10 A continuous collector current capability (with proper mounting/heatsink).
- 125 W total power dissipation (TC = 25°C) when properly heatsunk.
- Thermal resistance RθJC = 1.0 °C/W.
- Pb-Free device option.
Specifications:
| Parameter | Value |
|---|---|
| Device Type: | NPN Darlington Power Transistor |
| Collector-Emitter Voltage (VCEO): | 80 V |
| Collector-Base Voltage (VCBO): | 80 V |
| Emitter-Base Voltage (VEBO): | 5 V |
| Continuous Collector Current (IC): | 10 A |
| Peak Collector Current (ICM): | 15 A |
| Total Power Dissipation (PD): | 125 W |
| DC Current Gain (hFE): | 1000 (Min) @ IC = 5 A |
| Collector-Emitter Saturation Voltage (VCE(sat)): | 2 V @ IC = 5 A, IB = 10 mA |
| Base-Emitter On Voltage (VBE(on)): | 3 V |
| Base-Emitter Saturation Voltage (VBE(sat)): | 3.5 V |
| Junction-to-Case Thermal Resistance (RθJC): | 1.0 °C/W |
| Junction-to-Ambient Thermal Resistance (RθJA): | 35.7 °C/W |
| Operating Junction Temperature (TJ): | −65 °C to +150 °C |
| Package: | TO-218 |
Pinout:
Applications:
- General-purpose amplifier.
- Low-frequency switching.
Package Contents:
- 1x TIP141 NPN Darlington Transistor 80V 10A TO-218