TMS4464-12NL DRAM 64K x 4-bit 120ns IC DIP-18
The TMS4464-12NL DRAM 64K x 4-bit 120ns IC DIP-18 is a high-performance dynamic random access memory (DRAM) integrated circuit designed and manufactured by Texas Instruments. This device provides 64K words of memory with a 4-bit data width, optimized for page mode operation to enhance access efficiency. The TMS4464-12NL is built using NMOS technology and is housed in an 18-pin dual inline package suitable for through-hole PCB mounting. Its asynchronous access with a maximum access time of 120ns and common 3-STATE outputs make it compatible with a wide range of legacy microprocessor and digital system designs.
Features:
- High-performance 64K × 4-bit dynamic RAM with page mode architecture.
- Maximum access time of 120ns for fast data retrieval.
- 3-STATE outputs support bus sharing and bus-driven applications.
- Operates from a single +5 VDC power supply range (4.5 V–5.5 V).
- TTL compatible inputs and outputs simplify interfacing with standard logic families.
- NMOS technology for stable and reliable dynamic memory performance.
Specifications:
| Parameter | Value |
|---|---|
| Memory Organization | 64K x 4-bit |
| Total Memory Size | 262,144 bits |
| Access Time (RAS) | 120ns (max) |
| Access Time (CAS) | 60ns (max) |
| Cycle Time (Read/Write) | 220ns (min) |
| Cycle Time (Read-Modify-Write) | 295ns (min) |
| Refresh Period | 4ms (max) |
| Supply Voltage | 5VDC ±10% |
| Operating Current (IₒD₁) | 65mA (max) |
| Standby Current (IₒD₂) | 4.5mA (max) |
| Power Dissipation (Operating) | 330mW (max) |
| Power Dissipation (Standby) | 25mW (max) |
| Operating Temperature | 0°C to +70°C |
| Package Type | DIP-18 |
Pin configuration:
Applications:
- Vintage computing systems and retro electronics.
- Memory expansion in legacy microcontrollers and processors.
- Data storage in industrial control equipment.
- Buffer memory in communication devices.
- Embedded systems requiring low-power DRAM.
Package Include:
1x TMS4464-12NL DRAM 64K x 4-bit 120ns IC DIP-18.