Specifications
| Product Attribute | Attribute Value |
| Manufacturer: | Toshiba |
| Mounting Style: | Through Hole |
| Package/Case: | TO-3P-3 |
| Transistor Polarity: | PNP |
| Configuration: | Single |
| Collector- Emitter Voltage VCEO Max: | -230 V |
| Collector- Base Voltage VCBO: | -230 V |
| Emitter- Base Voltage VEBO: | -5 V |
| Collector-Emitter Saturation Voltage: | -1.5 V |
| Maximum DC Collector Current: | -15 A |
| Pd – Power Dissipation: | 150 W |
| Gain Bandwidth Product fT: | 30 MHz |
| Maximum Operating Temperature: | + 150 C |
| Continuous Collector Current: | – 15 A |
| DC Collector/Base Gain hFE Min: | 55 |
| DC Current Gain hFE Max: | 160 |
| Product Type: | BJTs – Bipolar Transistors |
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