Toshiba 2SK2699 N-Channel MOSFET Transistor 600V 12A TO-3P
The 2SK2699 is a high-performance, silicon N-channel MOS field effect transistor manufactured by Toshiba. Operating in enhancement mode, this power MOSFET features a low leakage current and an exceptionally low drain-source ON resistance. It is explicitly engineered for high-efficiency switching and power management systems, making it a reliable choice for chopper regulators, DC-DC converters, and motor drive applications.
Features
- Enhancement Mode Operation
- Low ON-Resistance
- High Forward Transfer Admittance
- Low Leakage Current
Specifications
Absolute Maximum Ratings (Ta = 25°C)
| Characteristic | Symbol | Rating | Unit |
|---|---|---|---|
| Drain-source voltage | VDSS | 600 | V |
| Drain-gate voltage (RGS = 20 kΩ) | VDGR | 600 | V |
| Gate-source voltage | VGSS | ±30 | V |
| Drain current (DC) | ID | 12 | A |
| Drain current (Pulse) | IDP | 48 | A |
| Drain power dissipation (Tc = 25°C) | PD | 150 | W |
| Single pulse avalanche energy | EAS | 605 | mJ |
| Avalanche current | IAR | 12 | A |
| Repetitive avalanche energy | EAR | 15 | mJ |
| Channel temperature | Tch | 150 | °C |
| Storage temperature range | Tstg | -55 to 150 | °C |
Electrical Characteristics (Ta = 25°C)
| Characteristic | Symbol | Test Condition | Min | Typ. | Max | Unit |
|---|---|---|---|---|---|---|
| Gate leakage current | IGSS | VGS = ±25 V, VDS = 0 V | — | — | ±10 | μA |
| Gate-source breakdown voltage | V(BR)GSS | IG = ±10 μA, VDS = 0 V | +30 | — | — | V |
| Drain cut-off current | IDSS | VDS = 600 V, VGS = 0 V | — | — | 100 | μA |
| Drain-source breakdown voltage | V(BR)DSS | ID = 10 mA, VGS = 0 V | 600 | — | — | V |
| Gate threshold voltage | Vth | VDS = 10 V, ID = 1 mA | 2.0 | — | 4.0 | V |
| Drain-source ON resistance | RDS(ON) | VGS = 10 V, ID = 6 A | — | 0.5 | 0.65 | Ω |
| Forward transfer admittance | |Yfs| | VDS = 10 V, ID = 6 A | 6.0 | 11.0 | — | S |
| Input capacitance | Ciss | VDS = 10 V, VGS = 0 V, f = 1 MHz |
— | 2600 | — | pF |
| Reverse transfer capacitance | Crss | — | 270 | — | ||
| Output capacitance | Coss | — | 820 | — | ||
| Rise time | tr | ID = 6 A, VGS = 10 V, VDD ≈ 300 V, RL = 50 Ω, Duty ≤ 1%, tw = 10 μs |
— | 45 | — | ns |
| Turn-on time | ton | — | 75 | — | ||
| Fall time | tf | — | 65 | — | ||
| Turn-off time | toff | — | 270 | — | ||
| Total gate charge | Qg | VDD ≈ 480 V, VGS = 10 V, ID = 12 A |
— | 58 | — | nC |
| Gate-source charge | Qgs | — | 37 | — | ||
| Gate-drain (“Miller”) charge | Qgd | — | 21 | — |
Source-Drain Diode Ratings and Characteristics (Ta = 25°C)
| Characteristic | Symbol | Test Condition | Min | Typ. | Max | Unit |
|---|---|---|---|---|---|---|
| Continuous drain reverse current | IDR | — | — | — | 12 | A |
| Pulse drain reverse current | IDRP | — | — | — | 48 | A |
| Forward voltage (diode) | VDSF | IDR = 12 A, VGS = 0 V | — | — | -1.7 | V |
| Reverse recovery time | trr | IDR = 12 A, VGS = 0 V, dIDR/dt = 100 A/μs |
— | 460 | — | ns |
| Reverse recovery charge | Qrr | — | 4.8 | — | μC |
Thermal Characteristics
| Characteristic | Symbol | Max | Unit |
|---|---|---|---|
| Thermal resistance, channel to case | Rth(ch-c) | 0.833 | °C/W |
| Thermal resistance, channel to ambient | Rth(ch-a) | 50 | °C/W |
Applications
- Chopper Regulators
- DC-DC Converters
- Motor Drives
Package Content
- 1 x Toshiba 2SK2699 N-Channel MOSFET Transistor 600V 12A TO-3P