TOSHIBA 2SK2700 N-Channel MOSFET Transistor 900V 3A 2-10R1B
TOSHIBA 2SK2700 N-Channel MOSFET (900V, 3A). Ideal for chopper regulators, DC-DC converters, and motor drives.
27.00 EGP
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The 2SK2700 is a Silicon N-Channel MOSFET Type (π–MOSIII) Field Effect Transistor manufactured by TOSHIBA. Operating in enhancement mode, this component is engineered to provide high forward transfer admittance while maintaining low leakage current.
Features
- Low Drain-Source ON Resistance: RDS (ON) = 3.7 Ω (typ.)
- High Forward Transfer Admittance: |Yfs| = 2.6 S (typ.)
- Low Leakage Current: IDSS = 100 μA (max) (VDS = 720 V)
- Enhancement Operation: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
Specifications
Absolute Maximum Ratings (Ta = 25°C)
| Characteristics | Symbol | Rating | Unit |
|---|---|---|---|
| Drain-source voltage | VDSS | 900 | V |
| Drain-gate voltage (RGS = 20 kΩ) | VDGR | 900 | V |
| Gate-source voltage | VGSS | ±30 | V |
| Drain current (DC) | ID | 3 | A |
| Drain current (Pulse) | IDP | 9 | A |
| Drain power dissipation (Tc = 25°C) | PD | 40 | W |
| Single pulse avalanche energy | EAS | 295 | mJ |
| Avalanche current | IAR | 3 | A |
| Repetitive avalanche energy | EAR | 4 | mJ |
| Channel temperature | Tch | 150 | °C |
| Storage temperature range | Tstg | -55 to 150 | °C |
Thermal Characteristics
| Characteristics | Symbol | Max | Unit |
|---|---|---|---|
| Thermal resistance, channel to case | Rth (ch-c) | 3.125 | °C/W |
| Thermal resistance, channel to ambient | Rth (ch-a) | 62.5 | °C/W |
Electrical Characteristics (Ta = 25°C)
| Characteristics | Symbol | Test Condition | Min | Typ. | Max | Unit |
|---|---|---|---|---|---|---|
| Gate leakage current | IGSS | VGS = ±30 V, VDS = 0 V | — | — | ±10 | μA |
| Gate-source breakdown voltage | V(BR)GSS | IG = ±10 μA, VDS = 0 V | +30 | — | — | V |
| Drain cut-off current | IDSS | VDS = 720 V, VGS = 0 V | — | — | 100 | μA |
| Drain-source breakdown voltage | V(BR)DSS | ID = 10 mA, VGS = 0 V | 900 | — | — | V |
| Gate threshold voltage | Vth | VDS = 10 V, ID = 1 mA | 2.0 | — | 4.0 | V |
| Drain-source ON resistance | RDS (ON) | VGS = 10 V, ID = 1.5 A | — | 3.7 | 4.3 | Ω |
| Forward transfer admittance | |Yfs| | VDS = 20 V, ID = 1.5 A | 0.65 | 2.6 | — | S |
| Input capacitance | Ciss | VDS = 25 V, VGS = 0 V, f = 1 MHz | — | 750 | — | pF |
| Reverse transfer capacitance | Crss | — | 10 | — | pF | |
| Output capacitance | Coss | — | 70 | — | pF | |
| Rise time | tr | VDD ≈ 200 V, ID = 1.5 A, VGS = 10 V, Vout, RL = 133 Ω, RG = 50 Ω, Duty ≤ 1%, tw = 10 μs | — | 15 | — | ns |
| Turn-on time | ton | — | 55 | — | ns | |
| Fall time | tf | — | 30 | — | ns | |
| Turn-off time | toff | — | 110 | — | ns | |
| Total gate charge (gate-source plus gate-drain) | Qg | VDD ≈ 400 V, VGS = 10 V, ID = 3 A | — | 25 | — | nC |
| Gate-source charge | Qgs | — | 13 | — | nC | |
| Gate-drain (“miller”) charge | Qgd | — | 12 | — | nC |
Source-Drain Ratings and Characteristics (Ta = 25°C)
| Characteristics | Symbol | Test Condition | Min | Typ. | Max | Unit |
|---|---|---|---|---|---|---|
| Continuous drain reverse current | IDR | — | — | — | 3 | A |
| Pulse drain reverse current | IDRP | — | — | — | 9 | A |
| Forward voltage (diode) | VDSF | IDR = 3 A, VGS = 0 V | — | — | -1.9 | V |
| Reverse recovery time | trr | IDR = 3 A, VGS = 0 V, dIDR/dt = 100 A/μs | — | 1100 | — | ns |
| Reverse recovery charge | Qrr | — | 7.2 | — | μC |
Applications
- Chopper Regulators
- DC-DC Converters
- Motor Drive Applications
Package Content
- 1 x TOSHIBA 2SK2700 N-Channel MOSFET Transistor 900V 3A 2-10R1B
DataSheet
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