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Home›Electronic Components (Through-hole)›Transistors›MOSFET Transistors›TOSHIBA 2SK2700 N-Channel MOSFET Transistor 900V 3A 2-10R1B
TOSHIBA

TOSHIBA 2SK2700 N-Channel MOSFET Transistor 900V 3A 2-10R1B

TOSHIBA 2SK2700 N-Channel MOSFET (900V, 3A). Ideal for chopper regulators, DC-DC converters, and motor drives.

27.00 EGP

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SKU:3496300150939
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TOSHIBA 2SK2700 N-Channel MOSFET Transistor 900V 3A 2-10R1B

The 2SK2700 is a Silicon N-Channel MOSFET Type (π–MOSIII) Field Effect Transistor manufactured by TOSHIBA. Operating in enhancement mode, this component is engineered to provide high forward transfer admittance while maintaining low leakage current.

Features
  • Low Drain-Source ON Resistance: RDS (ON) = 3.7 Ω (typ.)
  • High Forward Transfer Admittance: |Yfs| = 2.6 S (typ.)
  • Low Leakage Current: IDSS = 100 μA (max) (VDS = 720 V)
  • Enhancement Operation: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
Specifications
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Symbol Rating Unit
Drain-source voltage VDSS 900 V
Drain-gate voltage (RGS = 20 kΩ) VDGR 900 V
Gate-source voltage VGSS ±30 V
Drain current (DC) ID 3 A
Drain current (Pulse) IDP 9 A
Drain power dissipation (Tc = 25°C) PD 40 W
Single pulse avalanche energy EAS 295 mJ
Avalanche current IAR 3 A
Repetitive avalanche energy EAR 4 mJ
Channel temperature Tch 150 °C
Storage temperature range Tstg -55 to 150 °C
Thermal Characteristics
Characteristics Symbol Max Unit
Thermal resistance, channel to case Rth (ch-c) 3.125 °C/W
Thermal resistance, channel to ambient Rth (ch-a) 62.5 °C/W
Electrical Characteristics (Ta = 25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit
Gate leakage current IGSS VGS = ±30 V, VDS = 0 V — — ±10 μA
Gate-source breakdown voltage V(BR)GSS IG = ±10 μA, VDS = 0 V +30 — — V
Drain cut-off current IDSS VDS = 720 V, VGS = 0 V — — 100 μA
Drain-source breakdown voltage V(BR)DSS ID = 10 mA, VGS = 0 V 900 — — V
Gate threshold voltage Vth VDS = 10 V, ID = 1 mA 2.0 — 4.0 V
Drain-source ON resistance RDS (ON) VGS = 10 V, ID = 1.5 A — 3.7 4.3 Ω
Forward transfer admittance |Yfs| VDS = 20 V, ID = 1.5 A 0.65 2.6 — S
Input capacitance Ciss VDS = 25 V, VGS = 0 V, f = 1 MHz — 750 — pF
Reverse transfer capacitance Crss — 10 — pF
Output capacitance Coss — 70 — pF
Rise time tr VDD ≈ 200 V, ID = 1.5 A, VGS = 10 V, Vout, RL = 133 Ω, RG = 50 Ω, Duty ≤ 1%, tw = 10 μs — 15 — ns
Turn-on time ton — 55 — ns
Fall time tf — 30 — ns
Turn-off time toff — 110 — ns
Total gate charge (gate-source plus gate-drain) Qg VDD ≈ 400 V, VGS = 10 V, ID = 3 A — 25 — nC
Gate-source charge Qgs — 13 — nC
Gate-drain (“miller”) charge Qgd — 12 — nC
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit
Continuous drain reverse current IDR — — — 3 A
Pulse drain reverse current IDRP — — — 9 A
Forward voltage (diode) VDSF IDR = 3 A, VGS = 0 V — — -1.9 V
Reverse recovery time trr IDR = 3 A, VGS = 0 V, dIDR/dt = 100 A/μs — 1100 — ns
Reverse recovery charge Qrr — 7.2 — μC

Applications
  • Chopper Regulators
  • DC-DC Converters
  • Motor Drive Applications
Package Content
  • 1 x TOSHIBA 2SK2700 N-Channel MOSFET Transistor 900V 3A 2-10R1B
DataSheet
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