Features
- Simple Byte Write Operation
—No High Voltages Necessary
—Single TTL Level WE Signal Modifies Data
—Internally latched Address and Data
—Self Timed Write
—Noise Protected WE Pin - Reliable N-Channel Floating Gate MOS Technology
- Single 5V Supply
- Byte Write Time: 10 ms Max.
- Fast Access Time: 300 ns Max.
- Low Power Diss
—Active Current: 140 mA Max.
—Standby Current: 60 mA Max. - JEDEC Approved Byte-Wide Pinout
X2816AD SPECIFICATIONS
Sub Category | EEPROMs |
Access Time-Max | 300.0 ns |
Data Retention Time-Min | 100 |
Memory Density | 16384.0 bit |
Memory IC Type | EEPROM |
Memory Width | 8 |
Number of Functions | 1 |
Number of Terminals | 24 |
Number of Words | 2048.0 words |
Number of Words Code | 2K |
Operating Mode | ASYNCHRONOUS |
Operating Temperature-Min | 0.0 Cel |
Operating Temperature-Max | 70.0 Cel |
Organization | 2KX8 |
Package Code | DIP |
Number of Pins | 24 |
Package Shape | RECTANGULAR |
Package Style | IN-LINE |
Parallel/Serial | PARALLEL |
Seated Height-Max | 5.72 mm |
Standby Current-Max | 0.06 Amp |
Supply Current-Max | 0.14 Amp |
Supply Voltage-Nom (Vsup) | 5.0 V |
Supply Voltage-Min (Vsup) | 4.75 V |
Supply Voltage-Max (Vsup) | 5.25 V |
Terminal Finish | TIN LEAD |
Terminal Form | THROUGH-HOLE |
Terminal Pitch | 2.54 mm |
Terminal Position | DUAL |
Length | 32.07 mm |
Width | 15.24 mm |
Additional Feature | BYTE WRITE; OVER 100 YEARS DATA RETENTION |
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